Publications

• Communication dans un congrès

Hexagonal boron nitride nanowalls synthesized by unbalanced RF magnetron sputtering

B. Ben Moussa, J. d'Haen, C. Borschel, M. Saitner, A. Soltani, V. Mortet, C. Ronning, M. d'Olieslaeger, H.G. Boyen, K. Haenen

Materials Research Society Fall Meeting, MRS Fall 2010, Symposium CC : Boron and boron compounds - From fundamentals to applications, 2010, Boston, MA, United States. pp.mrsf10-1307-cc06-09, 1-6, ⟨10.1557/opl.2011.505⟩. ⟨hal-00800885⟩

• Communication dans un congrès

Development of a functional model for the nanoparticle-organic memory transistor

O. Bichler, W. Zhao, G. Gamrat, F. Alibart, S. Pleutin, D. Vuillaume

IEEE International Symposium on Circuits and Systems, ISCAS 2010, 2010, France. pp.1663-1666, ⟨10.1109/ISCAS.2010.5537487⟩. ⟨hal-00549960⟩

• Article dans une revue

Label-free analysis of water-polluting parasite by electrochemical impedance spectroscopy

T. Houssin, J. Follet, A. Follet, E. Dei-Casa, V. Senez

Biosensors and Bioelectronics, 2010, 25, pp.1122-1129. ⟨10.1016/j.bios.2009.09.039⟩. ⟨hal-00549495⟩

• Article dans une revue

Control of III-V nanowire crystal structure by growth parameter tuning [Invited]

Kimberly A. Dick, Philippe Caroff, Jessica Bolinsson, Maria E. Messing, Jonas Johansson, Knut Deppert, L.R. Wallenberg, Lars Samuelson

In this work we investigate the variation of the crystal structure of gold-seeded III–V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III–V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All…

Semiconductor Science and Technology, 2010, 25 (2), pp.024009-1-11. ⟨10.1088/0268-1242/25/2/024009⟩. ⟨hal-00548699⟩

• Article dans une revue

A theoretical and experimental study of the BCB thin-film cap zero-level package based on FEM simulations

S. Seok, N. Rolland, P.A. Rolland

Journal of Micromechanics and Microengineering, 2010, 20, pp.095010-1-7. ⟨10.1088/0960-1317/20/9/095010⟩. ⟨hal-00548602⟩

• Article dans une revue

Testing the temperature limits of GaN-based HEMT devices

D. Maier, M. Alomari, N. Grandjean, J.F. Carlin, M.A. Di Forte-Poisson, C. Dua, A. Chuvilin, David Troadec, Christophe Gaquière, U. Kaiser, S.L. Delage, E. Kohn

IEEE Transactions on Device and Materials Reliability, 2010, 10, pp.427-436. ⟨10.1109/TDMR.2010.2072507⟩. ⟨hal-00579038⟩

• Article dans une revue

Improved dielectric properties of Bi1.5Zn1.0Nb1.5O7/(111)-oriented Ba0.6Sr0.4TiO3 bilayered films for tunable microwave applications

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.1215-1217. ⟨10.1111/j.1551-2916.2009.03516.x⟩. ⟨hal-00549505⟩

• Communication dans un congrès

Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructures for high speed and low power consumption electronic devices

L. Desplanque, D. Vignaud, S. Godey, S.R. Plissard, E. Cadio, X. Wallart, P. Liu, H. Sellier

16th International Conference on Molecular Beam Epitaxy, MBE 2010, 2010, Berlin, Germany. ⟨hal-00573659⟩

• Article dans une revue

Pilot-Aided Sequential Monte Carlo Estimation of Phase Distortions and Transmitted Symbols in Multicarrier Systems

François Septier, Yves Delignon, Atika Rivenq, Christelle Garnier

We address the challenging problem of the joint estimation of transmitted symbols and phase distortions in standardized multicarrier systems, including pilot or virtual subcarriers. These subcarriers create time correlation on the useful transmitted OFDM signal that we propose to take into account…

Journal of Electrical and Computer Engineering, 2010, 2010, pp.1-5. ⟨10.1155/2010/536057⟩. ⟨hal-00738663⟩

• Article dans une revue

Silicon wafer characterisation by laser ultrasonics and neural networks

F. Lefevre, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Journal of Physics: Conference Series, 2010, 214, pp.012042 -1-5. ⟨10.1088/1742-6596/214/1/012042⟩. ⟨hal-00549913⟩