Publications

• Communication dans un congrès

Sputtered indium tin oxide thin films deposited on glass substrate for photovoltaic application

L. Kerkache, A. Layadi, F. Hadjersi, El Hadj Dogheche, A. Gokarna, A. Stolz, Mathieu Halbwax, Jean-Pierre Vilcot, Didier Decoster, Basma El Zein, S.S. Habib

International Conference on Renewable Energies and Power Quality, ICREPQ'10, 2010, France. pp.1-3. ⟨hal-00549979⟩

• Article dans une revue

DC performance of high-quantum-efficiency 1.3µm GaNAsSb/GaAs waveguide photodetector

Z. Xu, N. Saadsaoud, Malek Zegaoui, Wan Khai Loke, Kianhuan Tan, S. Wicaksono, Soon Fatt Yoon, Christiane Legrand, Didier Decoster, Jean Chazelas

We present the dc performance of a high-quantum-efficiency GaNAsSb/GaAs p-i-n waveguide photodetector. GaNAsSb with N and Sb contents of 3.3% and 8%, respectively, is sandwiched by AlGaAs/GaAs cladding layers. Two types of device epilayer structures, i.e., with and without AlGaAs cladding layer,…

IEEE Electron Device Letters, 2010, 31 (5), pp.449-451. ⟨10.1109/LED.2010.2041742⟩. ⟨hal-00549004⟩

• Article dans une revue

Polarization-independent imaging with an acousto-optic tandem system

Konstantin B. Yushkov, Samuel Dupont, Jean-Claude Kastelik, V.B. Voloshinov

Optics Letters, 2010, 35, pp.1416-1418. ⟨10.1364/OL.35.001416⟩. ⟨hal-00549023⟩

• Communication dans un congrès

100mV noise performances of Te-doped Sb-HEMT

A. Noudeviwa, A. Olivier, Yannick Roelens, Francois Danneville, Nicolas Wichmann, N. Waldhoff, L. Desplanque, X. Wallart, S. Bollaert

8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.25-28, ⟨10.1109/ASDAM.2010.5667012⟩. ⟨hal-00549922⟩

• Communication dans un congrès

Tellurium delta-doped 120nm AlSb/InAs HEMTs : towards sub-100mV electronics

Yannick Roelens, A. Olivier, L. Desplanque, A. Noudeviwa, Francois Danneville, Nicolas Wichmann, X. Wallart, S. Bollaert

68th Device Research Conference, DRC 2010, 2010, United States. pp.53-54, ⟨10.1109/DRC.2010.5551945⟩. ⟨hal-00549924⟩

• Article dans une revue

High frequency modelling of power transformer : application to railway substation in scale model

H. Ouaddi, S. Baranowski, N. Idir

Przeglad Elektrotechniczny , 2010, 86, pp.165-169. ⟨hal-00549475⟩

• Article dans une revue

AlInN/AlN/GaN HEMT technology on SiC with 10-W/mm and 50% PAE at 10 GHz

N. Sarazin, E. Morvan, M.A. Di Forte Poisson, M. Oualli, Christophe Gaquière, O. Jardel, O. Drisse, M. Tordjman, M. Magis, S.L. Delage

IEEE Electron Device Letters, 2010, 31, pp.11-13. ⟨10.1109/LED.2009.2035145⟩. ⟨hal-00549451⟩

• Article dans une revue

Low microwave noise of AlGaN/GaN HEMTs fabricated on SiCopSiC substrates

Virginie Hoel, N. Defrance, Y. Douvry, Jean-Claude de Jaeger, N. Vellas, Christophe Gaquière, M.A. Di Forte-Poisson, J. Thorpe, R. Langer

Electronics Letters, 2010, 46, pp.84-85. ⟨10.1049/el.2010.2576⟩. ⟨hal-00549457⟩

• Article dans une revue

Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate

N. Defrance, Y. Douvry, Virginie Hoel, J.C. Gerbedoen, A. Soltani, Michel Rousseau, Jean-Claude de Jaeger, R. Langer, H. Lahreche

Electronics Letters, 2010, 46, pp.949-950. ⟨10.1049/el.2010.0431⟩. ⟨hal-00549463⟩

• Article dans une revue

Statistical channel model based on alpha-stable random processes and application to the 60 GHz ultra wide band channel

N. Azzaoui, Laurent Clavier

IEEE Transactions on Communications, 2010, 58, pp.1457-1467. ⟨10.1109/TCOMM.2010.05.090069⟩. ⟨hal-00548612⟩