Publications

Affichage de 9641 à 9650 sur 16179


  • Article dans une revue

Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate

N. Defrance, Y. Douvry, Virginie Hoel, J.C. Gerbedoen, A. Soltani, Michel Rousseau, Jean-Claude de Jaeger, R. Langer, H. Lahreche

Electronics Letters, 2010, 46, pp.949-950. ⟨10.1049/el.2010.0431⟩. ⟨hal-00549463⟩

  • Article dans une revue

Deep levels in AlGaN/GaN HEMTs on silicon substrate are characterized by current deep level transient spectroscopy

H. Mosbahi, M. Gassoumi, Christophe Gaquière, M.A. Zaidi, H. Maaref

Optoelectronics and Advanced Materials - Rapid Communications, 2010, 4, pp.1783-1785. ⟨hal-00567897⟩

  • Article dans une revue

Low microwave noise of AlGaN/GaN HEMTs fabricated on SiCopSiC substrates

Virginie Hoel, N. Defrance, Y. Douvry, Jean-Claude de Jaeger, N. Vellas, Christophe Gaquière, M.A. Di Forte-Poisson, J. Thorpe, R. Langer

Electronics Letters, 2010, 46, pp.84-85. ⟨10.1049/el.2010.2576⟩. ⟨hal-00549457⟩

  • Article dans une revue

High frequency modelling of power transformer : application to railway substation in scale model

H. Ouaddi, S. Baranowski, N. Idir

Przeglad Elektrotechniczny , 2010, 86, pp.165-169. ⟨hal-00549475⟩

  • Article dans une revue

Tuning and switching the hypersonic phononic properties of elastic impedance contrast nanocomposites

A. Sato, Yan Pennec, N. Shingne, T. Thum-Albrecht, W. Knoll, M. Steinhart, Bahram Djafari-Rouhani, G. Fytas

ACS Nano, 2010, 4, pp.3471-3481. ⟨10.1021/nn100519h⟩. ⟨hal-00549446⟩

  • Communication dans un congrès

Génération d'ondes de choc et focalisation à courte distance dans le champ de cavitation ultrasonore à basse fréquence

Bertrand Dubus, C. Vanhille, C. Campos-Pozuelo, C. Granger

10ème Congrés Français d'Acoustique, CFA 10, 2010, France. pp.1-4. ⟨hal-00572204⟩

  • Article dans une revue

Characterization of ytterbium silicide formed in ultra high vacuum

Adam Laszcz, Jacek Ratajczak, Andrzej Czerwinski, Jerzy Katcki, Vesna Srot, Fritz Phillipp, Peter A. van Aken, Dmitri Yarekha, Nicolas Reckinger, Guilhem Larrieu, Emmanuel Dubois

The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions…

Journal of Physics: Conference Series, 2010, 209 : 16th International Conference on Microscopy of Semiconducting Materials, pp.012056 (1--4). ⟨10.1088/1742-6596/209/1/012056⟩. ⟨hal-00549559⟩