Publications

Affichage de 9651 à 9660 sur 16075


  • Article dans une revue

Label-free analysis of water-polluting parasite by electrochemical impedance spectroscopy

T. Houssin, J. Follet, A. Follet, E. Dei-Casa, V. Senez

Biosensors and Bioelectronics, 2010, 25, pp.1122-1129. ⟨10.1016/j.bios.2009.09.039⟩. ⟨hal-00549495⟩

  • Article dans une revue

Control of III-V nanowire crystal structure by growth parameter tuning [Invited]

Kimberly A. Dick, Philippe Caroff, Jessica Bolinsson, Maria E. Messing, Jonas Johansson, Knut Deppert, L.R. Wallenberg, Lars Samuelson

In this work we investigate the variation of the crystal structure of gold-seeded III–V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III–V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All…

Semiconductor Science and Technology, 2010, 25 (2), pp.024009-1-11. ⟨10.1088/0268-1242/25/2/024009⟩. ⟨hal-00548699⟩

  • Article dans une revue

A theoretical and experimental study of the BCB thin-film cap zero-level package based on FEM simulations

S. Seok, N. Rolland, P.A. Rolland

Journal of Micromechanics and Microengineering, 2010, 20, pp.095010-1-7. ⟨10.1088/0960-1317/20/9/095010⟩. ⟨hal-00548602⟩

  • Article dans une revue

Testing the temperature limits of GaN-based HEMT devices

D. Maier, M. Alomari, N. Grandjean, J.F. Carlin, M.A. Di Forte-Poisson, C. Dua, A. Chuvilin, David Troadec, Christophe Gaquière, U. Kaiser, S.L. Delage, E. Kohn

IEEE Transactions on Device and Materials Reliability, 2010, 10, pp.427-436. ⟨10.1109/TDMR.2010.2072507⟩. ⟨hal-00579038⟩

  • Article dans une revue

Improved dielectric properties of Bi1.5Zn1.0Nb1.5O7/(111)-oriented Ba0.6Sr0.4TiO3 bilayered films for tunable microwave applications

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.1215-1217. ⟨10.1111/j.1551-2916.2009.03516.x⟩. ⟨hal-00549505⟩

  • Communication dans un congrès

Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructures for high speed and low power consumption electronic devices

L. Desplanque, D. Vignaud, S. Godey, S.R. Plissard, E. Cadio, X. Wallart, P. Liu, H. Sellier

16th International Conference on Molecular Beam Epitaxy, MBE 2010, 2010, Berlin, Germany. ⟨hal-00573659⟩

  • Article dans une revue

Silicon wafer characterisation by laser ultrasonics and neural networks

F. Lefevre, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Journal of Physics: Conference Series, 2010, 214, pp.012042 -1-5. ⟨10.1088/1742-6596/214/1/012042⟩. ⟨hal-00549913⟩

  • Communication dans un congrès

Sub-terahertz resistive mixing in a AlGaN/GaN HEMT

Kamel Madjour, Guillaume Ducournau, Sylvie Lepilliet, Tahsin Akalin, Jean-Francois Lampin, Marie-Antoinette Di Forte-Poisson, Sylvain Laurent Delage, Christophe Gaquière

An AlGaN/GaN based field effect transistor (FET) has been designed, fabricated, and used as a resistive mixer for heterodyne detection in the 140-220 GHz frequency range. A double VNA heterodyne measurement setup has been used in an on-wafer configuration to accurately quantify the incident…

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, Sep 2010, Rome, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612437⟩. ⟨hal-00550020⟩

  • Communication dans un congrès

A multifunctional 60-GHz system for automotive applications with communication and positioning abilities based on time reversal

Michael Bocquet, Christophe Loyez, C. Lethien, N. Deparis, M. Heddebaut, Atika Rivenq, N. Rolland

7th European Radar Conference, EuRAD 2010, 2010, France. pp.61-64. ⟨hal-00550029⟩