Publications

Affichage de 9801 à 9810 sur 16261


  • Article dans une revue

Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate

O. Fathallah, M. Gassoumi, B. Grimbert, Christophe Gaquière, H. Maaref

European Physical Journal: Applied Physics, 2010, 51, pp.10304-1-5. ⟨10.1051/epjap/2010085⟩. ⟨hal-00549476⟩

  • Article dans une revue

Bottom and top electrodes nature and PZT film thickness influence on electrical properties

N. Sama, Caroline Soyer, Denis Remiens, C. Verrue, R. Bouregba

Sensors and Actuators A: Physical , 2010, 158, pp.99-105. ⟨10.1016/j.sna.2009.11.032⟩. ⟨hal-00549503⟩

  • Article dans une revue

Micromachining SU-8 pivot structures using AZ photoresist as direct sacrificial layers for a large wing displacement

X.Q. Bao, Thomas Dargent, Eric Cattan

Journal of Micromechanics and Microengineering, 2010, 20, pp.025005-1-13. ⟨10.1088/0960-1317/20/2/025005⟩. ⟨hal-00549518⟩

  • Article dans une revue

Silicon-based micromembranes with piezoelectric actuation and piezoresistive detection for sensing purposes in liquid media

Thomas Alava, Fabrice Mathieu, L. Mazenq, Caroline Soyer, Denis Remiens, Liviu Nicu

Journal of Micromechanics and Microengineering, 2010, 20, pp.075014-1-8. ⟨10.1088/0960-1317/20/7/075014⟩. ⟨hal-00549532⟩

  • Article dans une revue

Fabrication of 24-MHz-disk resonators with silicon passive integration technology

M. Sworowski, F. Neuilly, Bernard Legrand, A. Summanwar, P. Philippe, L. Buchaillot

IEEE Electron Device Letters, 2010, 31, pp.23-25. ⟨10.1109/LED.2009.2034542⟩. ⟨hal-00548984⟩

  • Article dans une revue

Three-terminal junctions operating as mixers, frequency doublers and detectors : a broad-band frequency numerical and experimental study at room temperature

I. Iniguez-De-La-Torre, T. Gonzalez, D. Pardo, C. Gardes, Yannick Roelens, S. Bollaert, A. Curutchet, Christophe Gaquière, J. Mateos

Semiconductor Science and Technology, 2010, 25, pp.125013-1-14. ⟨10.1088/0268-1242/25/12/125013⟩. ⟨hal-00548604⟩

  • Article dans une revue

Image reconstruction using a photonic crystal based flat lens operating at 1.55 μm

M. Hofman, D. Lippens, O. Vanbesien

Applied optics, 2010, 49, pp.5806-5813. ⟨10.1364/AO.49.005806⟩. ⟨hal-00548625⟩

  • Communication dans un congrès

Sub-terahertz resistive mixing in a AlGaN/GaN HEMT

Kamel Madjour, Guillaume Ducournau, Sylvie Lepilliet, Tahsin Akalin, Jean-Francois Lampin, Marie-Antoinette Di Forte-Poisson, Sylvain Laurent Delage, Christophe Gaquière

An AlGaN/GaN based field effect transistor (FET) has been designed, fabricated, and used as a resistive mixer for heterodyne detection in the 140-220 GHz frequency range. A double VNA heterodyne measurement setup has been used in an on-wafer configuration to accurately quantify the incident…

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, Sep 2010, Rome, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612437⟩. ⟨hal-00550020⟩