Publications

Affichage de 991 à 1000 sur 15761


  • Article dans une revue

The Ground State of Epitaxial Germanene on Ag(111)

Kai Zhang, Marie-Christine Hanf, Romain Bernard, Yves Borensztein, Hervé Cruguel, Andrea Resta, Yves Garreau, Alina Vlad, Alessandro Coati, Davide Sciacca, Bruno Grandidier, Mickael Derivaz, Carmelo Pirri, Philippe Sonnet, Régis Stephan, Geoffroy Prévot

Two-dimensional (2D) honeycomb lattices beyond graphene, such as germanene, appear very promising due to their outstanding electronic properties, such as the quantum spin Hall effects. While there have been many claims of germanene monolayers up to now, no experimental evidence of a honeycomb…

ACS Nano, 2023, 17 (16), pp.15687-15695. ⟨10.1021/acsnano.3c02821⟩. ⟨hal-04195214⟩

  • Chapitre d'ouvrage

Boosting III-Nitride Solar Cell Efficiency Using a Semibulk Absorber and Piezo-Phototronic Effect

Rabeb Belghouthi, Sahar Ammar, Jean-Paul Salvestrini, Nejiba Aoun, Mounir Ben El Hadj Rhouma

In solar cell applications, III-nitrides have appeared as a suitable candidates principally due to their photovoltaic properties. Nevertheless, the performance of the fabricated devices did not fit the theoretical expectation. This is generally attributed to a poor crystalline quality of the InGaN…

Design and Modeling of Mechanical Systems - V, Springer International Publishing, pp.393-401, 2023, Lecture Notes in Mechanical Engineering, ⟨10.1007/978-3-031-14615-2_44⟩. ⟨hal-03773241⟩

  • Communication dans un congrès

A simulation tool to interpret error rates in LoRa systems under frequency-sweeping jamming

Artur de São José, Virginie Deniau, Alexandre Boé, Eric Pierre Simon

In a recent experimental study, we submitted a LoRa system to jamming attacks, consisting of frequency-sweeping intentional electromagnetic interference. In the present contribution, we reproduce this scenario in a computational environment aiming to explain the previously observed phenomena based…

XXXVth General Assembly and Scientific Symposium of the International Union of Radio Science (URSI GASS 2023), Aug 2023, Sapporo, Japan. pp.1-4, ⟨10.23919/URSIGASS57860.2023.10265647⟩. ⟨hal-04127556v2⟩

  • Communication dans un congrès

Automated and Robotic On-Wafer Probing Station

Cerine Mokhtari, Clément Lenoir, Mohamed Sebbache, Kamel Haddadi

Emergent microwave and millimetre-wave technologies call for new and more accurate characterization techniques. In particular, repeatability of on-wafer calibration and measurements methods must be addressed. In this work, we are presenting the hardware and software development of a new…

2023 IEEE Symposium on Wireless Technology & Applications (ISWTA), Aug 2023, Kuala Lumpur, Malaysia. pp.99-102, ⟨10.1109/ISWTA58588.2023.10249964⟩. ⟨hal-04268605⟩

  • Article dans une revue

Highly Conductive Tungsten Suboxide Nanotubes

Cécile Huez, Maxime Berthe, Florence Volatron, Jean-Michel Guigner, Dalil Brouri, Lise-Marie Chamoreau, Benoît Baptiste, Dominique Vuillaume, Anna Proust

We demonstrate a high electron conductivity (> 10^2 S/cm and up to 10^3 S/cm) of tungsten suboxide W18O(52.4-52.9)(or equivalently WO(2.91-2.94)) nanotubes (2 to 3 nm in diameter, ca. micrometer long). The conductivity is measured in the temperature range 120 to 300K by a four probe scanning…

Journal of Applied Physics, 2023, 134, pp.134301. ⟨10.1063/5.0170761⟩. ⟨hal-04178947v2⟩

  • Article dans une revue

High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers

G. Di Gioia, E. Frayssinet, M. Samnouni, V. Chinni, P. Mondal, J. Treuttel, X. Wallart, M. Zegaoui, Guillaume Ducournau, Yannick Roelens, Yvon Cordier, Mohamed Zaknoune

Quasi-vertical gallium nitride (GaN) Schottky diodes on silicon carbide (SiC) substrates were fabricated for frequency multiplier applications. The epitaxial structure employed had an n− layer of 590 nm with doping 6.6 × 1016 cm−3, while the n+ layer was 950 nm thick, with doping 2 × 1019 cm−3.…

Journal of Electronic Materials, 2023, 52, pp.5249-5255. ⟨10.1007/s11664-023-10499-3⟩. ⟨hal-04115301⟩

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