Publications

• Article dans une revue

Synthesis and electrical properties of fullerene-based molecular junctions on silicon substrate

David Guérin, S. Lenfant, S. Godey, D. Vuillaume

Journal of Materials Chemistry, 2010, 20, pp.2680-2690. ⟨10.1039/b924255d⟩. ⟨hal-00548971⟩

• Communication dans un congrès

Monocouches organiques auto-assemblées pour application en transistors à effet de champ et switch électrooptique

D. Lmimouni, Marc Ternisien, S. Lenfant, David Guérin, Dominique Vuillaume

PIRM IV : 4e Congrès International Physique des Interactions Rayonnement Matière, Dakhla, MOROCCO, 2010, Dakhla, Maroc. ⟨hal-03954183⟩

• Communication dans un congrès

Sub-Terahertz imaging with AlGaN/GaN MISFETs

Salman Nadar, Oleg Klimenko, Hadley Videlier, Dominique Coquillat, Nina Diakonova, Frederic Teppe, Wojciech Knap, K. Madjour, Guillaume Ducournau, Christophe Gaquière, M. A. Poisson, J. Torres, J. Szczytko, A. Dobroiu, C. Otani

We evaluate the optical performance of AlGaN/GaN MISFETs as a non-resonant sub-terahertz, room temperature detector. The single-pixel responsivity and the noise equivalent power are determined. The efficiency of the detection is demonstrated by the room temperature imaging of different solutions of…

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, Sep 2010, Rome, Italy. pp.1, ⟨10.1109/ICIMW.2010.5612996⟩. ⟨hal-00636141⟩

• Article dans une revue

Adjustable supercontinuum laser source with low coherence length and low timing jitter

Marco Andreana, Anne Bertrand, Y. Hernandez, Philippe Leproux, Vincent Couderc, Stéphane Hilaire, Guillaume Huss, D. Giannone, Alessandro Tonello, Alexis Labruyère

This paper introduces a supercontinuum (SC) laser source emitting from 400 nm to beyond 1750 nm, with adjustable pulse repetition rate (from 250 kHz to 1 MHz) and duration (from ~200 ps to ~2 ns). This device makes use of an internally-modulated 1.06 μm semiconductor laser diode as pump source. The…

Proceedeing SPIE Europe, 2010, 7714, pp. 771404. ⟨10.1117/12.854237⟩. ⟨hal-00633563⟩

• Article dans une revue

Experimental verification of negative refraction for a wedge-type negative index metamaterial operating at terahertz

Shengxiang Wang, Frédéric Garet, Karine Blary, Eric Lheurette, Jean-Louis Coutaz, Didier Lippens

We report on angle-resolved time domain spectroscopy TDS carried out on a prismlike negative index metamaterial operating around 0.5 THz. The wedge-type devices are constituted of hole arrays etched in gold thin films, which are stacked according to a sequential mask shift. By means of a…

Applied Physics Letters, 2010, 97, pp.181902. ⟨10.1063/1.3511540⟩. ⟨hal-00991478⟩

• Article dans une revue

Lumped elements circuit of terahertz fishnet-like arrays with composite dispersion

Jorge Carbonell, Charles Croënne, Frédéric Garet, Eric Lheurette, Jean-Louis Coutaz, Didier Lippens

We have analyzed and characterized a terahertz stacked holes array over a broad transmission bandwidth. In this context, we identify the key contributions of the surface plasmon modes related to the periodicity of array, and of the subcut off transmission through the holes responsible of a ground…

Journal of Applied Physics, 2010, 108 (1), pp.014907. ⟨10.1063/1.3455994⟩. ⟨hal-00548689⟩

• Article dans une revue

Self-consistent electrothermal Monte Carlo simulation of single InAs nanowire channel metal-insulator field-effect transistors

T. Sadi, Jean-Luc Thobel, F. Dessenne

Journal of Applied Physics, 2010, 108, pp.084506-1-7. ⟨10.1063/1.3496658⟩. ⟨hal-00549484⟩

• Article dans une revue

Anisotropic transport properties in InAs/AlSb heterostructures

G. Moschetti, H. Zhao, P.A. Nilsson, S. Wang, A. Kalabukhov, Gilles Dambrine, S. Bollaert, L. Desplanque, X. Wallart, J. Grahn

Applied Physics Letters, 2010, 97, pp.243510-1-3. ⟨10.1063/1.3527971⟩. ⟨hal-00548565⟩

• Autre publication scientifique

Dispositifs fluidiques de contrôle actif d'écoulements à base de microsystèmes magnéto-électro-mécaniques (MMEMS) (conception, réalisation, tests)

Romain Viard

2010. ⟨hal-00800592⟩

• Communication dans un congrès

Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering

C. Ostermaier, G. Pozzovivo, J.F. Carlin, B. Basnar, W. Schrenk, A.M. Andrews, Y. Douvry, Christophe Gaquière, Jean-Claude de Jaeger, L. Toth, B. Pecz, M. Gonschorek, E. Feltin, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik

30th International Conference on the Physics of Semiconductors, ICPS-30, 2010, Seoul, South Korea. pp.905-906, ⟨10.1063/1.3666669⟩. ⟨hal-00800884⟩