Publications

• Article dans une revue

Enhanced acousto-optic interactions in a one-dimensional phoxonic cavity

I. Psarobas, N. Papanikolaou, N. Stefanou, Bahram Djafari-Rouhani, Bernard Bonello, Vincent Laude

We report on the occurrence of strong nonlinear acousto-optic interactions in a one-dimensional model phoxonic cavity that supports, simultaneously, photonic and phononic localized resonant modes, by means of rigorous electrodynamic and elastodynamic calculations. We show that these interactions…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.174303. ⟨10.1103/PhysRevB.82.174303⟩. ⟨hal-00541555⟩

• Article dans une revue

Terahertz generation and power limits in In0.53Ga0.47As photomixer coupled to transverse-electromagnetic-horn antenna driven at 1.55 µm wavelengths

Juliette Mangeney, F. Meng, Djamal Gacemi, Emilien Peytavit, Jean-Francois Lampin, Tahsin Akalin

We report continuous wave generation at frequencies up to 2 THz using ion-irradiated In0.53Ga0.47As photomixers coupled to transverse-electromagnetic-horn antennae driven at 1.55 m wavelength. Output powers up to 0.1 W at 700 GHz have been achieved. The dependence of the output power on incident…

Applied Physics Letters, 2010, 97, pp.161109-1-3. ⟨10.1063/1.3505341⟩. ⟨hal-00548957⟩

• Communication dans un congrès

Design, fabrication and characterization of BCB polymer embedded 60 GHz parallel-coupled BPF

S. Seok, N. Rolland, P.A. Rolland

60th Electronic Components and Technology Conference, ECTC 2010, 2010, Las Vegas, NV, United States. pp.501-505, ⟨10.1109/ECTC.2010.5490923⟩. ⟨hal-00800849⟩

• Article dans une revue

Gold-free growth of GaAs nanowires on silicon : arrays and polytypism

S.R. Plissard, K. A. Dick, G. Larrieu, S. Godey, A. Addad, X. Wallart, P. Caroff

Nanotechnology, 2010, 21, pp.385602-1-8. ⟨10.1088/0957-4484/21/38/385602⟩. ⟨hal-00548717⟩

• Article dans une revue

Oligothiophene-derivatized azobenzene as immobilized photoswitchable conjugated systems

S. Karpe, M. Oçafrain, K. Smaali, S. Lenfant, D. Vuillaume, P. Blanchard, J. Roncali

Chemical Communications, 2010, 46, pp.3657-3659. ⟨10.1039/c002072a⟩. ⟨hal-00548970⟩

• Article dans une revue

Structured light fringe projection setup using optimized acousto-optic deflectors

Samuel Dupont, Jean-Claude Kastelik, Michel Pommeray

IEEE/ASME Transactions on Mechatronics, 2010, 15, pp.557-560. ⟨10.1109/TMECH.2010.2052627⟩. ⟨hal-00549025⟩

• Article dans une revue

Computer simulation of disordered structures and nanosystems : an atomic-scale view

C. Massobrio, F. Cleri, R. Kozubski

Solid State Sciences, 2010, 12, pp.155-156. ⟨10.1016/j.solidstatesciences.2010.01.016⟩. ⟨hal-00549045⟩

• Article dans une revue

Faceted sidewalls of silicon nanowires : Au-induced structural reconstructions and electronic properties

T. Xu, J.P. Nys, A. Addad, O.I. Lebedev, A. Urbieta, B. Salhi, Maxime Berthe, B. Grandidier, D. Stievenard

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81, pp.115403-1-10. ⟨10.1103/PhysRevB.81.115403⟩. ⟨hal-00549070⟩

• Article dans une revue

High-speed 1.3-µm p-i-n GaNAsSb/GaAs waveguide photodetector

Malek Zegaoui, Z. Xu, N. Saadsaoud, Kianhuan Tan, Wan Khai Loke, Satrio Wicaksono, Soon Fatt Yoon, Christiane Legrand, Didier Decoster, Jean Chazelas

The authors report the demonstration of high-speed GaNAsSb/GaAs p-i-n waveguide photodetector grown by molecular beam epitaxy technique. A 0.4-μm-thick GaNAsSb core layer with 3.3% of N and 8% of Sb for detection wavelength over 1.3 μm is sandwiched by GaAs and AlGaAs cladding layers. The device…

IEEE Electron Device Letters, 2010, 31 (7), pp.704-706. ⟨10.1109/LED.2010.2049563⟩. ⟨hal-00549006⟩

• Article dans une revue

Optically power supplied Gbit/s wireless hotspot using 1.55 µm THz photomixer and heterodyne detection at 200 GHz

Guillaume Ducournau, P. Szriftgiser, Denis Bacquet, Alexandre Beck, Tahsin Akalin, Emilien Peytavit, Mohammed Zaknoune, Jean-Francois Lampin

A wireless transmission system with a remote-supplied hotspot is demonstrated working up to gigabit data rates. The emission uses a 200 GHz carrier frequency, generated using an 1.55 µm photomixer composed of an unitravelling carrier photodiode monolithically integrated with a wide bandwidth…

Electronics Letters, 2010, 46, pp.1349-1350. ⟨10.1049/el.2010.2062⟩. ⟨hal-00548731⟩