Publications

• Communication dans un congrès

Cristaux phononiques hypersoniques à base d'oxyde d'aluminium nanoporeux

A. Sato, Yan Pennec, Bahram Djafari-Rouhani, G. Fytas, W. Knoll, M. Steinhart

12èmes Journées de la Matière Condensée, JMC12, 2010, Troyes, France. ⟨hal-00574126⟩

• Chapitre d'ouvrage

BAW-IC co-integration tunable filters at GHz frequencies

A. Cathelin, S. Razafimandimby, A. Kaiser

A.H.M. van Roermund, M. Steyaert, H. Casier. Analog circuit design : smart data converters, filters on chip, multimode transmitters, Springer-Verlag, pp.207-232, 2010. ⟨hal-00575846⟩

• Chapitre d'ouvrage

Microtechnologies and micromanipulation

L. Buchaillot

Chaillet N., Régnier S. Microrobotics for micromanipulation, Wiley-ISTE, pp.335-368, 2010. ⟨hal-00575862⟩

• Article dans une revue

Subterahertz characterization of ethanol hydration layers by microfluidic system

Simon Laurette, A. Treizebre, Frederic Affouard, Bertrand Bocquet

Characterizations of ethanol hydration layers are examined through subterahertz spectroscopy of water/ethanol mixtures by using a microfluidic system. A three-component model is used to explain measurements discrepancies with the Lambert–Beer law and to determine ethanol hydration shell absorption…

Applied Physics Letters, 2010, 97, pp.111904-1-3. ⟨10.1063/1.3488832⟩. ⟨hal-00549500⟩

• Article dans une revue

Optical and microstructural properties versus indium content in InxGa1-xN films grown by metal organic chemical vapor deposition

Anisha Gokarna, Aurélien Gauthier-Brun, Will Liu, Ydir Androussi, Eric Dumont, El Hadj Dogheche, J.H. Teng, Soojin Chua, Didier Decoster

We present comparative investigations of single phase InxGa1−xN alloys for a varying In content (x=0.07 to 0.14) grown by metal organic chemical vapor deposition (MOCVD) technique. While the composition was determined using secondary ion mass spectroscopy, we have investigated the microstructures…

Applied Physics Letters, 2010, 96 (19), pp.191909. ⟨10.1063/1.3425761⟩. ⟨hal-00549024⟩

• Article dans une revue

Temperature dependent properties of InSb and InAs nanowire field-effect transistors

H.A. Nilsson, P. Caroff, C. Thelander, E. Lind, O. Karlström, L.E. Wernersson

Applied Physics Letters, 2010, 96, pp.153505-1-3. ⟨10.1063/1.3402760⟩. ⟨hal-00548729⟩

• Communication dans un congrès

Atomic scale dopant metrology in an individual silicon nanowire by atom probe tomography

W.H. Chen, Rodrigue Lardé, Emmanuel Cadel, T. Xu, J.P. Nys, B. Grandidier, D. Stiévenard, Philippe Pareige

In this work, the p-type silicon nanowires (SiNWs) are grown by the Chemical Vapor Deposition (CVD) method using gold as catalyst droplet, silane as precursor and diborane as dopant reactant and are analyzed at the atomic scale using the three dimensional laser assisted Atom Probe Tomography (APT…

Nanotechnology 2010 Advanced Materials, CNTs, Particles, Films and Composites - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010, Jun 2010, Anaheim, CA, United States. pp.29-32. ⟨hal-01953261⟩

• Article dans une revue

Low-frequency surface plasmon excitations in multicoaxial negative-index metamaterial cables

M.S. Kushwaha, Bahram Djafari-Rouhani

By using an elegant response function theory, which does not require matching of the messy boundary conditions, we investigate the surface plasmon excitations in the multicoaxial cylindrical cables made up of negative-index metamaterials. The multicoaxial cables with dispersive metamaterial…

Journal of the Optical Society of America B, 2010, 27, pp.605-610. ⟨10.1364/JOSAB.27.000605⟩. ⟨hal-00549077⟩

• Article dans une revue

Low-temperature scanning tunneling microscopy study of self-assembled InAs quantum dots grown by droplet epitaxy

Corentin Durand, A. Peilloux, K. Suzuki, K. Kanisawa, B. Grandidier, K. Muraki

Using molecular beam epitaxy, we study self-assembled InAs quantum dots (QDs) grown on GaAs (001) substrates by lowtemperature scanning tunneling microscopy. We compare two different growth processes, the well-known Stranski-Krastanow mode and the more recently studied droplet epitaxy mode. We show…

Physics Procedia, 2010, Proceedings of the 14th International conference on Narrow Gap Semiconductors and Systems, 3 (2), pp.1299-1304. ⟨10.1016/j.phpro.2010.01.180⟩. ⟨hal-00568565⟩

• Proceedings/Recueil des communications

Galileo Galilei. Notes on Trattato di Fortificazione

Raffaele Pisano, Danilo Capecchi

Proceedings of Galileo and the renaissance scientific discourse, Edizioni Nuova Cultura, pp.28-41, 2010, 978-88-6134-491-4. ⟨hal-04513904⟩