Publications

• ART

Graphene on metallic substrates : suppression of the Kohn anomalies in the phonon dispersion

A. Allard, L. Wirtz

Nano Letters, 2010, 10, pp.4335-4340. ⟨10.1021/nl101657v⟩. ⟨hal-00549079⟩

• COMM

325 GHz CPW band pass filter integrated in advanced HR SOI RF CMOS technology

F. Gianesello, R. Pilard, Sylvie Lepilliet, N. Waldhoff, C. Durand, S. Boret, B. Martineau, Gilles Dambrine, D. Gloria, B. Rauber, C. Raynaud

40th European Microwave Conference, EuMC 2010, 2010, France. pp.57-60. ⟨hal-00549919⟩

• COMM

G-band low noise amplifier and oscillator for synthetic aperture applications

G. Desruelles, N. Rolland, P. Rolland

40th European Microwave Conference, EuMC 2010, 2010, France. pp.525-528. ⟨hal-00549933⟩

• COMM

A compact coplanar waveguide metamaterial-inspired line and its use in tunable narrow bandpass filters

Alejandro Borja, Jorge Carbonell, Vicente Boria, Angel Belenguer, Didier Lippens

In this paper, novel cells, arrays, and reconfigurable metamaterial-inspired coplanar waveguide lines are studied. The novelty stems from the control of the so-called electric and magnetic plasma frequencies by properly designing the loading elements. In particular, wide shunt wires permit one to…

40th European Microwave Conference, EuMC 2010, Sep 2010, Paris, France. pp.922-925, ⟨10.23919/EUMC.2010.5616941⟩. ⟨hal-00549943⟩

• COMM

DC and RF cryogenic behaviour of InAs/AlSb HEMTs

G. Moschetti, P.A. Nilsson, L. Desplanque, X. Wallart, H. Rodilla, J. Mateos, J. Grahn

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, 2010, Japan. pp.321-324, ⟨10.1109/ICIPRM.2010.5516313⟩. ⟨hal-00549956⟩

• ART

Picosecond carrier lifetime in low-temperature-grown GaAsSb

X. Wallart, Christophe Coinon, S.R. Plissard, S. Godey, Olivier Offranc, Ydir Androussi, Vincent Magnin, Jean-Francois Lampin

We study the influence of growth parameters on the properties of low-temperature-grown GaAsSb layers with 15–20% Sb. We demonstrate that a proper choice of growth conditions allows achieving monocrystalline as-grown layers exhibiting carrier lifetime around 1 ps and a resistivity higher than 1 kΩ·…

Japanese Journal of Applied Physics, part 2 : Letters, 2010, 3, pp.111202-1-3. ⟨10.1143/APEX.3.111202⟩. ⟨hal-00548732⟩

• COMM

Temperature dependent degradation modes in AlGaN/GaN HEMTs

Y. Douvry, Virginie Hoel, Jean-Claude de Jaeger, N. Defrance, N. Malbert, N. Labat, A. Curutchet, C. Sury, C. Dua, M. Oualli, M. Piazza, J. Bluet, W. Chikhaoui, C. Bru-Chevallier

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, Paris, France. pp.114-117. ⟨hal-00550022⟩

• COMM

Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

Aurélien Olivier, Nicolas Wichmann, Jiongjong Mo, Albert M.D. Noudeviwa, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, François Martin, O. Desplats, Jérôme Saint-Martin, Minghua Shi, Y. Wang, M-P Chauvat, P. Ruterana, Hassan Maher

In this paper, a 200 nm n-channel inversion-type self-aligned In 0.53 Ga 0.47 As MOSFET with a Al 2 O 3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and…

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩. ⟨hal-00549921⟩

• COMM

Pushing conventional SiGe HBT technology towards 'dotfive' terahertz

A. Chantre, P. Chevalier, T. Lacave, G. Avenier, M. Buczko, Y. Campidelli, L. Depoyan, L. Berthier, Christophe Gaquière

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.21-24. ⟨hal-00550010⟩

• COMM

Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs

N. Malbert, N. Labat, A. Curutchet, C. Sury, Virginie Hoel, Jean-Claude de Jaeger, N. Defrance, Y. Douvry, C. Dua, M. Oualli, M. Piazza, C. Bru-Chevallier, J.M. Bluet, W. Chikhaoui

IEEE International Reliability Physics Symposium, IRPS 2010, 2010, United States. pp.139-145, ⟨10.1109/IRPS.2010.5488839⟩. ⟨hal-00550009⟩