Publications
Affichage de 10041 à 10050 sur 15762
A 60GHz 65nm CMOS RMS power detector for antenna impedance mismatch detection
J. Gorisse, A. Cathelin, A. Kaiser, E. Kerhervé
35th European Solid-State Circuits Conference, ESSCIRC 2009, 2009, Greece. pp.172-175, ⟨10.1109/ESSCIRC.2009.5326027⟩. ⟨hal-00474432⟩
Micro-systèmes et contrôle d'écoulements
Alain Merlen, Philippe Pernod, Abdelkrim Talbi, Romain Viard, Leticia Gimeno
CFM 2009 - 19ème Congrès Français de Mécanique, Aug 2009, Marseille, France. ⟨hal-03390896⟩
Terahertz imaging using high electron mobility transistors as plasma wave detectors
S. Nadar, D. Coquillat, M. Sakowicz, H. Videlier, F. Teppe, N. Dyakonova, W. Knap, J.M. Peiris, J. Lyonnet, D. Seliuta, I. Kasalynas, G. Valusis, K. Madjour, D. Theron, Christophe Gaquière, M.A. Poisson
Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.2855-2857. ⟨10.1002/pssc.200982532⟩. ⟨hal-00800810⟩
Characterization of nano-crystalline diamond films grown by continuous DC bias during plasma enhanced chemical vapor deposition
V. Mortet, L. Zhang, M. Eckert, A. Soltani, J. d'Haen, O. Douheret, M. Moreau, S. Osswald, E. Neyts, David Troadec, P. Wagner, A. Bogaerts, G. van Tendeloo, K. Haenen
Materials Research Society Fall Meeting, MRS Fall 2009, Symposium J : Diamond electronics and bioelectronics - Fundamentals to applications III, 2009, Boston, MA, United States. pp.1203-J05-03, 41-46, ⟨10.1557/PROC-1203-J05-03⟩. ⟨hal-00800940⟩
Optical properties of gallium nitride epitaxial layers deposited on a novel low temperature buffer layer - Application to waveguide applications
A. Stolz, E. Cho, El Hadj Dogheche, D. Pavlidis, Didier Decoster
28èmes Journées Nationales d'Optique Guidée, OPTIQUE Lille 2009, 2009, Villeneuve d'Ascq, France. ⟨hal-00575297⟩
Carbon and nanowires based devices for high frequencey and low power applications
H. Happy, L. Nougaret, N. Meng, Gilles Dambrine, S. Bollaert, D. Hourlier, P. Caroff, D. Vignaud
Sino-French Workshop, 2009, Shanghai, China. ⟨hal-00574847⟩
Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor
Nicolas Wichmann, B.G. Vasallo, S. Bollaert, Yannick Roelens, X. Wallart, A. Cappy, T. Gonzalez, D. Pardo, J. Mateos
Applied Physics Letters, 2009, 94, pp.103504-1-3. ⟨10.1063/1.3095482⟩. ⟨hal-00469682⟩
Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation
C. Ostermaier, G. Pozzovivo, J.F. Carlin, B. Basnar, W. Schrenk, Y. Douvry, Christophe Gaquière, J.C. Dejaeger, K. Cico, K. Frohlich, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik
IEEE Electron Device Letters, 2009, 30, pp.1030-1032. ⟨10.1109/LED.2009.2029532⟩. ⟨hal-00473635⟩
InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess
M. Alomari, F Medjdoub, J.F. Carlin, E. Feltin, N. Grandjean, A. Chuvilin, U. Kaiser, Christophe Gaquière, E. Kohn
IEEE Electron Device Letters, 2009, 30, pp.1131-1133. ⟨10.1109/LED.2009.2031659⟩. ⟨hal-00473634⟩
InAlN/GaN heterostructures for microwave power and beyond
E. Kohn, M. Alomari, A. Denisenko, M. Dipalo, D. Maier, F Medjdoub, C. Pietzka, S. Delage, M.A. Di Forte-Poisson, E. Morvan, N. Sarazin, J.C. Jacquet, C. Dua, J.F. Carlin, N. Grandjean, M. Py, M. Gonschorek, J. Kuzmik, D. Pogany, G. Pozzovivo, C. Ostermaier, L. Toth, B. Pecz, Jean-Claude de Jaeger, Christophe Gaquière, K. Cico, K. Fröhlich, A. Kermaidis, E. Iliopoulos, G. Konstantinidis, C. Giessen, M. Heuken, B. Schineller
International Electron Devices Meeting, IEDM 2009, 2009, United States. pp.1-4, ⟨10.1109/IEDM.2009.5424395⟩. ⟨hal-00474463⟩