Publications

Affichage de 10501 à 10510 sur 15860


  • Communication dans un congrès

V-Band Amplifier MMICs Using Multi-Finger InP/GaAsSb DHBT Technology

J. Godin, V. Nodjiadjim, M. Riet, P. Berdaguer, S. Piotrowicz, O. Jardel, A. Scavennec, Jean-Christophe Nallatamby, Christophe Gaquière, M. Werquin

We report on the development of a multi-finger InP/GaAsSb DHBT technology, optimized for the fabrication of RF MMICs. Geometry (number of fingers) and structure optimization has allowed to get FT~200 GHz and FMAX>300 GHz, to suit microwave applications. Special attention has been paid to…

31st IEEE Compound Semiconductor Integrated Circuit Symposium, CSISC 2009, Oct 2009, Greensboro - Caroline du Nord, United States. pp.1-4, ⟨10.1109/csics.2009.5315658⟩. ⟨hal-00474497⟩

  • Article dans une revue

The inter-modes mixing effects in mode group diversity multiplexing

M. Awad, Iyad Dayoub, A. Okassa M'Foubat, Jean-Michel Rouvaen

Optics Communications, 2009, 282, pp.3908-3917. ⟨10.1016/j.optcom.2009.06.065⟩. ⟨hal-00471836⟩

  • Article dans une revue

Parallel interference cancellation in DS-CDMA optical networks using bias compensation

A. Okassa M'Foubat, Iyad Dayoub, Jean-Michel Rouvaen, Y. Zouine

European Transactions on Telecommunications, 2009, 20, pp.564-571. ⟨10.1002/ett.1358⟩. ⟨hal-00471835⟩

  • Article dans une revue

Light polarized resonant Raman spectra from individual single- and double-wall carbon nanotubes

Jaroslaw Judek, David Brunel, Thierry Melin, Marcin Marczak, Mariusz Zdrojek, Wojciech Gȩbicki, Leszek Adamowicz

Measured light polarization dependent resonant Raman spectra from spatially isolated semiconducting single- and double-wall carbon nanotubes are reported. Most of the observed modes intensities exhibit two or fourfold symmetry, for VV and VH configuration, respectively. Weak quantitative changes in…

Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.2056-2059. ⟨10.1002/pssc.200881757⟩. ⟨hal-00473404⟩

  • Article dans une revue

CO2 laser-induced crystallization of sol-gel-derived indium tin oxide films

X.Y. Tao, I. Fsaifes, V. Koncar, C. Dufour, C. Lepers, L. Hay, B. Capoen, M. Bouazaoui

Applied physics. A, Materials science & processing, 2009, 96, pp.741-749. ⟨10.1007/s00339-009-5157-7⟩. ⟨hal-00472769⟩

  • Article dans une revue

(6 x 2) Reconstruction of the Ag/Si(111) surface at 77 K (vol 603, pg 311, 2009) - Corrigendum

A. Urbieta, K. Schulte, B. Grandidier, D. Deresmes, S.C. Erwin, D. Stievenard

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2009, 603, pp.1079-1079. ⟨10.1016/j.susc.2009.02.002⟩. ⟨hal-00473064⟩

  • Article dans une revue

Use of the circuit approach to solve large EMC problems

S. Leman, B. Demoulin, O. Maurice, M. Cauterman, P. Hoffmann

Comptes Rendus. Physique, 2009, 10, pp.70-82. ⟨10.1016/j.crhy.2009.01.006⟩. ⟨hal-00473696⟩

  • Article dans une revue

MMICs time-domain electrical physical simulator adapted to the parallel computation

A. El Moussati, Jean-Claude de Jaeger, Christophe Dalle

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2009, 22, pp.279-296. ⟨10.1002/jnm.706⟩. ⟨hal-00473652⟩

  • Article dans une revue

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Yvon Cordier, Fabrice Semond, Jean-Christophe Moreno, Éric Frayssinet, Brahim Benbakhti, Z. Cao, Sébastien Chenot, Lee Nguyen, Olivier Tottereau, Ali Soltani, Karine Blary

In this work, we describe the main features of selective area growth (SAG) of GaN by molecular beam epitaxy (MBE) using ammonia. Different schemes such as growth into micrometer and nanometer size windows in Si3N4 dielectric masks and mesa structures etched on GaN or Silicon substrate are studied.

Materials Science in Semiconductor Processing, 2009, 12, pp.16-20. ⟨10.1016/j.mssp.2009.07.003⟩. ⟨hal-00473644⟩

  • Article dans une revue

Amine-terminated silicon nanoparticles: synthesis, optical properties and their use in bioimaging

Milena Rosso-Vasic, Evan Spruijt, Zoran Popovic, Karin Overgaag, Barend van Lagen, B. Grandidier, Daniel Vanmaekelbergh, David Dominguez-Gutierrez, Luisa de Cola, Han Zuilhof

Very stable and bright emitting amine-terminated Si nanoparticles (NPs) with different alkyl chain lengths between the Si core and amine end-group are synthesized. The obtained NPs have a spherical shape and homogeneous size distribution (1.57 ± 0.24 nm). Their emission can be tuned from the UV to…

Journal of Materials Chemistry, 2009, 19 (33), pp.5926-5933. ⟨10.1039/b902671a⟩. ⟨hal-00473065⟩

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