Publications

• Article dans une revue

Attenuation of Lamb waves in the vicinity of a forbidden band in a phononic crystal

M. Bavencoffe, Anne-Christine Hladky, B. Morvan, J.L. Izbicki

Springer Proceedings in Physics, 2009, 128, pp.227-235. ⟨10.1007/978-3-540-89105-5_20⟩. ⟨hal-00469053⟩

• Article dans une revue

Acoustic wave transmission through piezoelectric structured materials

M. Lam, E. Le Clezio, H. Amorin, M. Alguero, J. Holc, M. Kosec, Anne-Christine Hladky, G. Feuillard

Ultrasonics, 2009, 49, pp.424-431. ⟨10.1016/j.ultras.2008.11.001⟩. ⟨hal-00469003⟩

• Article dans une revue

Recent ROB developments on wide bandgap based UV sensors

B. Giordanengo, A. Ben Moussa, Jean-François Hochedez, A. Soltani, P. de Moor, K. Minoglou, P. Malinowski, J.Y. Duboz, Y.M. Chong, Y.S. Zou, W.J. Zhang, S.T. Lee, R. Dahal, J. Li, J.Y. Lin, H.X. Jiang

The next ESA spatial mission planned to study the Sun, Solar Orbiter (SO), necessitates very innovative EUV detectors. The commonly used silicon detectors suffer important limitations mainly in terms of UV robustness and dark current level. An alternative comes from diamond or III-nitride materials…

EAS Publications Series, 2009, 37, pp.199-205. ⟨10.1051/eas/0937025⟩. ⟨hal-00473643⟩

• Article dans une revue

Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors

N. Baron, M. Leroux, N. Zeggaoui, P. Corfdir, F. Semond, Z. Bougrioua, M. Azize, Y. Cordier, J. Massies

Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.S715-S718. ⟨10.1002/pssc.200880828⟩. ⟨hal-00472680⟩

• Article dans une revue

Noise spectroscopy of AlGaN/GaN HEMT structures with long channels

S.A. Vitusevich, M.V. Petrychuk, A.M. Kurakin, S.V. Danylyuk, D. Mayer, Z. Bougrioua, A.V. Naumov, A.E. Belyaev, N. Klein

Journal of Statistical Mechanics: Theory and Experiment, 2009, 9, pp.P01046-1-10. ⟨10.1088/1742-5468/2009/01/P01046⟩. ⟨hal-00472677⟩

• Article dans une revue

Silicon nanowires coated with silver nanostructures as ultrasensitive interfaces for surface-enhanced Raman spectroscopy

E. Galopin, J. Barbillat, Yannick Coffinier, Sabine Szunerits, G. Patriarche, Rabah Boukherroub

Silver nanoparticles (Ag NPs) were chemically deposited on silicon nanowires (SiNWs), prepared using the vapor−liquid−solid (VLS) growth mechanism, using an in situ electroless metal deposition technique. The resulting SiNWs/Ag NPs composite interfaces showed large Raman scattering enhancement for…

Applied Materials & Interfaces, 2009, 1, pp.1396-1403. ⟨10.1021/am900087s⟩. ⟨hal-00413200⟩

• Communication dans un congrès

Lignes différentielles à ondes lentes intégrées sur silicium

M. Abdelaziz, Florence Podevin, A. Safwat, A. Vilcot

16èmes Journées Nationales Microondes, May 2009, Grenoble, France. ⟨hal-00603020⟩

• Communication dans un congrès

Atténuation des ondes de Lamb et ondes évanescentes dans un réseau phononique à une dimension

M. Bavencoffe, B. Morvan, Anne-Christine Hladky, J.L. Izbicki

XIèmes Journées d'Acoustique Physique, Sous-Marine et Ultrasonore, JAPSUS 2009, 2009, Le Mans, France. ⟨hal-00574845⟩

• Article dans une revue

A reduction modeling method to assess the electromagnetic emission of multiconductor transmission lines

Guillaume Andrieu, X. Bunlon, J.P. Parmantier, Alain Reineix, L. Kone, B. Demoulin

Comptes Rendus. Physique, 2009, 10, pp.83-90. ⟨10.1016/j.crhy.2008.12.002⟩. ⟨hal-00473697⟩

• Article dans une revue

Novel bondpad report process for III-V semiconductor devices using full HSQ properties

Malek Zegaoui, Nargess Choueib, P. Tilmant, Marc François, Christiane Legrand, Jean Chazelas, Didier Decoster

This paper reports on an easy and quick planarization and passivation technique of III-V compound semiconductor compatible with nanoscale devices. Vertical etching requires good sidewalls passivation to reduce drastically the leakage current and to obtain a good planarization of the devices for…

Microelectronic Engineering, 2009, 86 (1), pp.68-71. ⟨10.1016/j.mee.2008.09.043⟩. ⟨hal-00473043⟩