Publications

Affichage de 11151 à 11160 sur 16094


  • Article dans une revue

New developments on diamond photodetector for VUV solar observations

Ali Benmoussa, Ali Soltani, Ken Haenen, Udo Kroth, Vincent Mortet, Hassan Ali Barkad, David Bolsée, Christian Hermans, M. Richter, Jean-Claude de Jaeger, Jean-François Hochedez

A new large-size metal–semiconductor–metal photoconductor device of 4.6 mm in diameter based on diamond material has been reprocessed and characterized in the vacuum-ultraviolet (VUV) wavelength range. The metal finger contacts have been processed to 2 µm in width with spacing between the contacts…

Semiconductor Science and Technology, 2008, 23 (3), pp.035026. ⟨10.1088/0268-1242/23/3/035026⟩. ⟨hal-00357795⟩

  • Article dans une revue

A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes : influence of direct quantum tunnelling and temperature

E. Pascual, R. Rengel, N. Reckinger, Xing Tang, V. Bayot, Emmanuel Dubois, M.J. Martin

In this paper we present a Monte Carlo investigation of charge transport-including quantum tunnelling effects in fabricated back-to-back n-type Schottky barriers in the reverse bias regime. The effect of the variation of the temperature over the current density and over different internal…

Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCTS‐15), 5 (1), pp.119-122. ⟨10.1002/pssc.200776519⟩. ⟨hal-04710009⟩

  • Article dans une revue

1.55 µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

Kianhuan Tan, Soon Fatt Yoon, Wan Khai Loke, Satrio Wicaksono, Zhichuan Xu, Tien Khee Ng, Kim Luong Lew, N. Saadsaoud, Malek Zegaoui, Didier Decoster, Jean Chazelas

We demonstrate a 1.55 μm GaAsGaNAsSbGaAs optical waveguide grown by molecular beam epitaxy as an alternative to the AlGaAsGaAs system. The 0.4-μm -thick GaNAsSb guiding layer contains ∼3.5% of N and 9% of Sb, resulting in optical band gap of 0.88 eV. The refractive index of the GaNAsSb layer was…

Applied Physics Letters, 2008, 92 (11), pp.113513-1-3. ⟨10.1063/1.2898507⟩. ⟨hal-00357300⟩

  • Article dans une revue

Plasma oscillations in nanotransistors for room temperature detection and emission of terahertz radiation

A. El Fatimy, R. Tauk, S. Boubanga, F. Teppe, N. Dyakonova, W. Knap, J. Lyonnet, Y.M. Meziani, T. Otsuji, M.A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Yannick Roelens, Didier Theron, A. Cappy, Christophe Gaquière

Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 5, pp.244-248. ⟨10.1002/pssc.200776585⟩. ⟨hal-00360007⟩

  • Article dans une revue

Growth and structural characterization of cerium oxide thin films realized on Si(111) substrates by on-axis r.f. magnetron sputtering

M.T. Ta, D. Briand, Y. Guhel, J. Bernard, J.C. Pesant, B. Boudart

Thin Solid Films, 2008, 517, pp.450-452. ⟨10.1016/j.tsf.2008.08.059⟩. ⟨hal-00360032⟩

  • Article dans une revue

Particle cross transfer

L. Dobrzynski, Abdellatif Akjouj

Surface Science Reports, 2008, 63, pp.391-399. ⟨10.1016/j.surfrep.2008.04.001⟩. ⟨hal-00357384⟩

  • Communication dans un congrès

Single carbon nanotube at GHz frequency

Julien Chaste, Lorentz Lechner, Pascal Morfin, Gwendal Fève, Takis Kontos, Jean-Marc Berroir, Christian D.C. Glattli, Henri Happy, Perti Hakonen, Bernard Plaçais

International Conference on the Science and Application of Nanotubes (NT08), 2008, Montpellier, France. ⟨hal-00289768⟩

  • Article dans une revue

Metamorphic high electron mobility Te-doped AlInSb/GaInSb heterostructures on InP (001)

G. Delhaye, L. Desplanque, X. Wallart

Journal of Applied Physics, 2008, 104 (6), pp.066105. ⟨10.1063/1.2978365⟩. ⟨hal-00356944⟩