Publications

Affichage de 11171 à 11180 sur 16228


  • Article dans une revue

Transmission gaps and Fano resonances in an acoustic waveguide: analytical model

El Houssaine El Boudouti, Tarik Mrabti, Housni Al-Wahsh, Bahram Djafari-Rouhani, Abdellatif Akjouj, L. Dobrzynski

A simple acoustic device consisting of two dangling side resonators grafted at two sites on a slender tube is designed possibly to obtain transmission stop bands (where the propagation of longitudinal acoustic waves is forbidden). In contrast to all known systems of this kind, a spectral…

Journal of Physics: Condensed Matter, 2008, 20, pp.255212-1-10. ⟨10.1088/0953-8984/20/25/255212⟩. ⟨hal-00357776⟩

  • Communication dans un congrès

Short and long range sensing on plasmonic interfaces

Sabine Szunerits, Xavier Castel, Rabah Boukherroub

ICTFPM'08 "First International Conference on Thin Films and Porous Materials", May 2008, Alger, Algeria. ⟨hal-00403005⟩

  • Communication dans un congrès

What is the cultural matrix of the science we teach?

Raffaele Pisano

1° Interdivision AIf–Jommelli & Round-Table, 19 May, IIS Jommelli, Aversa & AIF Latina, May 2008, Aversa, Italy. ⟨hal-04518899⟩

  • Communication dans un congrès

What is the cultural and interdisciplinary role of the mathematical language of the physical sciences?

Raffaele Pisano

Research Lectures Series, 07 May, IIS Marconi, Latina & AIF Latina, May 2008, Latina, Italy. ⟨hal-04518896⟩

  • Article dans une revue

In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives

Cédric Durand, Fabrice Casset, Philippe Renaux, Nicolas Abelé, Bernard Legrand, Denis Renaud, Eric Ollier, Pascal Ancey, Adrian M. Ionescu, Lionel Buchaillot

A14-MHz in-plane nanoelectromechanical resonator based on a resonant-suspended-gate (RSG) MOSFET principle and integrated in a front-end process is demonstrated. The devices are in-plane flexural vibration mode beams (L = 10 μm, w = 165 nm, and h = 400 nm) with 120-nm gaps. This letter details the…

IEEE Electron Device Letters, 2008, 29 (5), pp.494-496. ⟨10.1109/LED.2008.919781⟩. ⟨cea-00320837⟩