Publications

• Article dans une revue

Nonlinear effects in split ring resonators loaded with heterostructure barrier varactors

Jorge Carbonell, Vicente Boria, Didier Lippens

The advantages afforded by the symmetrical C(V) characteristics of Heterostructure Barrier Varactor (HBV) diodes for the fabrication of nonlinear metamaterials are investigated numerically. The studies are conducted by means of full-wave numerical modelling along with circuit analysis. It is…

Microwave and Optical Technology Letters, 2008, 50 (2), pp.474-479. ⟨10.1002/mop.23122⟩. ⟨hal-00356918⟩

• Communication dans un congrès

[Invité] Nanofils de semiconducteurs : effets de confinement quantique et diélectrique

Christophe Delerue, Mamadou Diarra, Yann-Michel Niquet, Guy Allan

22èmes Journées Surfaces-Interfaces, JSI 2008, Jan 2008, Grenoble, France. ⟨hal-00811725⟩

• Communication dans un congrès

The role played by Mechanical Science during the Architect and Engineers design in the Renaissance

Raffaele Pisano

Research Lectures Series Prof. Dr. Eberhard Knobloch, 23 January, Institut für Philosophie, Wissenschaftstheorie, Wissenschafts–und Technikgeschichte, Technische Universität,, Jan 2008, Berlin - Humboldt Universität, Germany. ⟨hal-04518901⟩

• Thèse

Fabrication top-down, caractérisation et applications de nanofils silicium, Top-down fabrication, characterisation and applications of silicon nanowires

Francois Vaurette

Cette thèse porte sur l'étude de nanofils silicium réalisés par approche top-down. Elle s'inscrit dans le contexte de la miniaturisation des composants et la compréhension du transport dans les systèmes 1D. Deux voies de fabrication sont envisagées : la lithographie par AFM (Microscope à…, This work focuses on the study of silicon nanowires made by a top-down approach. The context of the study is the miniaturisation of the components and the understanding of the transport in 1D systems. Two fabrication approaches are studied: AFM lithography (Atomic Force Microscope) and e-beam…

Matière Condensée [cond-mat]. Université des Sciences et Technologie de Lille - Lille I, 2008. Français. ⟨NNT : ⟩. ⟨tel-00342294⟩

• Communication dans un congrès

Characterization of IN-IC integrable in-plane nanometer scale resonators fabricated by a silicon on nothing advanced CMOS technology

Cédric Durand, Fabrice Casset, Bernard Legrand, Marc Faucher, Philippe Renaux, Denis Mercier, Denis Renaud, Didier Dutartre, Eric Ollier, Pascal Ancey, Lionel Buchaillot

The paper reports on in-plane nanometer scale resonators fabricated on 8 inch industrial tools, with a process based on the advanced CMOS Front End Silicon On Nothing Technology. The aim is to propose totally integrated time reference functions realized by small size NEMS resonators. The…

21st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2008, Jan 2008, Tucson - AZ, United States. pp.1016-1019, ⟨10.1109/MEMSYS.2008.4443831⟩. ⟨cea-00320830⟩

• Article dans une revue

Inner-shell charging of multiwalled carbon nanotubes

Mariusz Zdrojek, Thomas Heim, David Brunel, Alexandre Mayer, Thierry Melin

The electrostatic properties of individual multiwalled carbon nanotubes (MWCNTs) have been investigated from charge injection and electrostatic force microscopy experiments. The MWCNT linear charge densities analyzed as a function of the nanotube diameters are found to differ from classical…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.033404-1-4. ⟨10.1103/PhysRevB.77.033404⟩. ⟨hal-00357364⟩

• Article dans une revue

Characterization of ultrathin SOI film and application to short channel MOSFETs

Xing Tang, N. Reckinger, G. Larrieu, Emmanuel Dubois, D. Flandre, J.P. Raskin, B. Nysten, A.M. Jonas, V. Bayot

In this study, a very dilute solution (NH4OH:H2O2:H2O 1:8:64 mixture) was employed to reduce the thickness of commercially available SOI wafers down to 3 nm. The etch rate is precisely controlled at 0.11 Å s−1 based on the self-limited etching speed of the solution. The thickness uniformity of the…

Nanotechnology, 2008, 19, pp.165703-1-7. ⟨10.1088/0957-4484/19/16/165703⟩. ⟨hal-00356972⟩

• Ouvrages

Scienze e Religioni. Il ruolo delle scienze naturali, ipotesi di studio e prospettive (Sciences and Religions. The role of natural sciences, study hypotheses and perspectives)

Rafel Pascual, Raffaele Pisano

• Article dans une revue

Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process

Nicolas Breil, Emmanuel Dubois, Aomar Halimaoui, Arnaud Pouydebasque, Guilhem Larrieu, Adam Laszcz, J. Ratajcak, Thomas Skotnicki

In this letter, an original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. After silicidation annealing, the excess of Pt due to incomplete reaction…

IEEE Electron Device Letters, 2008, 29, pp.152-154. ⟨10.1109/LED.2007.914090⟩. ⟨hal-00356971⟩

• Article dans une revue

Gold metallogeny in the Birimian craton of Burkina Faso.

Didier Béziat, M. Dubois, Pierre Debat, Serge Nikiéma, S. Salvi, Francis Tollon

J. Afr. Earth Sci, 2008, pp.215-233. ⟨hal-00326270⟩