Publications

Affichage de 11221 à 11230 sur 16094


  • Communication dans un congrès

Shape and faceting of Si nanocrystals embedded in an amorphous glass matrix

R. Soulairol, F. Cleri

European Materials Research Society Fall Meeting, E-MRS Fall 2008, Symposium G : Morphology and Dynamics of Nanostructures and Disordered Materials via Atomic-scale Modelling, 2008, Warsaw, Poland. ⟨hal-00362011⟩

  • N°spécial de revue/special issue

Special Issue. Qual è il ruolo culturale ed interdisciplinare delle scienze fisiche e matematiche ? Ipotesi e prospettive (Introduction to What is the cultural and interdisciplinary role of the physical and mathematical sciences? Hypotheses and perspectives)

Raffaele Pisano

Rivista di Epistemologia Didattica, III (5-6), 2008, What is the cultural and interdisciplinary role of the physical and mathematical sciences? Hypotheses and perspectives). ⟨hal-04514456⟩

  • Communication dans un congrès

Proximity Effect of Neighbour Victim Lossy Interconnects on a Single Attacker and Vice Versa

Freddy Ponchel, Jean-François Legier, Erick Paleczny, Christophe Seguinot, Denis Deschacht

Signal integrity on a set from three to eight lossy copper interconnects of less than one square micron is determined from a transient simulation based on electrical circuit representation. This circuit is deduced from a full wave finite element method. Our signal integrity results on numerous…

ISIC: International Symposium on Integrated Circuits, Sep 2007, Singapore, Singapore. pp.406-409, ⟨10.1109/ISICIR.2007.4441884⟩. ⟨lirmm-00176552⟩

  • Article dans une revue

Nanoscale investigations of switching properties and piezoelectric activity in ferroelectric thin films using piezoresponse force microscopy

Rachel Desfeux, Anthony Ferri, Céline Legrand, Luc Maes, Antonio Da Costa, G. Poullain, R. Bouregba, Caroline Soyer, Denis Remiens

International Journal of Nanotechnology, 2008, 5, 827-837, Special Issue on Nanotechnology in France. Part I : C'nano Nord-Ouest. ⟨10.1504/IJNT.2008.018701⟩. ⟨hal-00360329⟩

  • Communication dans un congrès

Electronic coupling in molecular aggregates and 2D assemblies of PbSe quantum dots

K. Overgaag, B. Grandidier, P. Liljeroth, D. Vanmaekelbergh

3rd Conference on Nanoscience with Nanocrystals, NaNaX 3, 2008, Lecce, Italy. ⟨hal-00361978⟩

  • Article dans une revue

Low-loss left-handed metamaterials at millimeter waves

F. Zhang, D.P. Gaillot, Charles Croënne, Eric Lheurette, X. Melique, D. Lippens

Applied Physics Letters, 2008, 93, pp.083104-1-3. ⟨10.1063/1.2975187⟩. ⟨hal-00356926⟩

  • Article dans une revue

UWB in millimeter wave band with pulsed ILO

N. Deparis, Christophe Loyez, N. Rolland, P.A. Rolland

IEEE Transactions on Circuits and Systems I: Regular Papers, 2008, 55, pp.339-343. ⟨10.1109/TCSII.2008.918977⟩. ⟨hal-00356911⟩

  • Communication dans un congrès

Damping of a simple structure with piezoelectrical materials and negative capacitance electrical circuits : application with a cantilever beam-analytical, experimental and ATILA FEM results

J.C. Debus, C. Granger, Anne-Christine Hladky

11th International Workshop on Smart Materials and Structures, CANSMART 2008, 2008, Canada. pp.119-130. ⟨hal-00360380⟩

  • Article dans une revue

Growth of Si nanowires on micropillars for the study of their dopant distribution by atom probe tomography

T. Xu, J.P. Nys, B. Grandidier, D. Stievenard, Yannick Coffinier, Rabah Boukherroub, R. Larde, E. Cadel, P. Pareige

Journal of Vacuum Science and Technology, 2008, 26, pp.1960-1963. ⟨10.1116/1.3021371⟩. ⟨hal-00357357⟩

  • Article dans une revue

RF small signal analysis of Schottky-barrier p-MOSFETs

R. Valentin, Emmanuel Dubois, J.P. Raskin, G. Larrieu, Gilles Dambrine, T.C. Lim, N. Breil, Francois Danneville

This paper presents a detailed RF study for source/drain Schottky-barrier (SB) MOSFETs. Using on-wafer -parameters, high-frequency (HF) figures-of-merit (FoMs) and small-signal equivalent circuits (SSEC) are first extracted and discussed for a -gate-length SB MOSFET. Then, using ac simulations, HF…

IEEE Transactions on Electron Devices, 2008, 55, pp.1192-1202. ⟨10.1109/TED.2008.919382⟩. ⟨hal-00356664⟩