Publications

• Communication dans un congrès

Amplitude dependence of the parametric interaction components inside the retrofocusing area with nonlinear time reversal acoustics

T. Goursolle, S. Calle, Olivier Bou Matar, S. dos Santos

18th International Symposium on Nonlinear Acoustics, ISNA-18, 2008, Sweden. pp.521-524, ⟨10.1063/1.2956273⟩. ⟨hal-00360395⟩

• Communication dans un congrès

Tremendous shrinking of terahertz plasmon resonance linewidth in multichannel high-electron-mobility transistor

A. Shchepetov, Chantal Gardes, Yannick Roelens, S. Bollaert, S. Boubanga-Tombet, F. Teppe, D. Coquillat, S. Nadar, N. Dyakonova, H. Videlier, W. Knap, D. Seliuta, R. Vadoklis, G. Valusis, V.V. Popov

EOS Annual Meeting, Topical Meeting 2 : Terahertz - Science and Technology, 2008, France. pp.1-2, CDROM. ⟨hal-00360410⟩

• Article dans une revue

Symmetrical frequency response in a split ring resonator based transmission line

Alejandro Borja, Jorge Carbonell, Vicente Boria, Didier Lippens

A coplanar waveguide line based on a split ring resonator technology and loaded with metallic strips and capacitances is proposed. The addition of series capacitances to previous unit cell implementations dramatically improves the upper band rejection levels and provides a transmission response…

Applied Physics Letters, 2008, 93 (20), pp.203505-1-3. ⟨10.1063/1.3025625⟩. ⟨hal-00356934⟩

• Article dans une revue

Investigation of piezoelectric and electrostrictive properties of (Pb1-3y/2,La-y) (Zr-x,Ti1-x)O-3 ferroelectric thin films using a Doppler laser vibrometer

R. Herdier, G. Leclerc, G. Poullain, R. Bouregba, Denis Remiens, El Hadj Dogheche

Ferroelectrics, 2008, 362, pp.145-151. ⟨10.1080/00150190802007176⟩. ⟨hal-00360336⟩

• Communication dans un congrès

Wide-band indoor localization effectiveness in presence of moving people

C. Laderriere, M. Heddebaut, J.B. Prost, Atika Rivenq, F. Elbahbar, Jean-Michel Rouvaen

5th Workshop on Positioning, Navigation and Communication 2008, WPNC'08, 2008, Germany. pp.103-111, ⟨10.1109/WPNC.2008.4510363⟩. ⟨hal-00360430⟩

• Communication dans un congrès

Evaluation of the water content in phenolic resin plates via nonlinear ultrasonic measurements

J. Fortineau, F. Vander Meulen, L. Haumesser, Olivier Bou Matar

18th International Symposium on Nonlinear Acoustics, ISNA-18, 2008, Sweden. pp.517-520, ⟨10.1063/1.2956272⟩. ⟨hal-00360394⟩

• Communication dans un congrès

Fabrication technology and device performance of ultra-short 30-nm-gate pseudomorphic In0.52Al0.48As/In0.75Ga0.25As HEMTs

Nicolas Wichmann, A. Shchepetov, I. Duszynski, Yannick Roelens, X. Wallart, Gilles Dambrine, A. Cappy, S. Bollaert

IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702912⟩. ⟨hal-00360404⟩

• Article dans une revue

Gold metallogeny in the Birimian craton of Burkina Faso.

Didier Béziat, M. Dubois, Pierre Debat, Serge Nikiéma, S. Salvi, Francis Tollon

J. Afr. Earth Sci, 2008, pp.215-233. ⟨hal-00326270⟩

• Article dans une revue

Experimental and theoretical investigation of terahertz optical-beating detection by plasma waves in high electron mobility transistors

H. Marinchio, J. Torres, G. Sabatini, P. Nouvel, C. Palermo, Laurent Chusseau, L. Varani, F. Teppe, P. Shiktorov, E. Starikov, V. Gruzinskis, A. Shchepetov, S. Bollaert, Yannick Roelens

A photomixed laser beam of two 1.55 μm lasers is used to obtain interband photoexcitation at the difference frequency and at room temperature in suvmicron gate length INAIA/InGaAs transistors. Results show the clear excitation of plasma oscillation modes in the transistors channel Fundamental…

Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 5 (1), pp.257-260. ⟨10.1002/pssc.200776572⟩. ⟨hal-00327410⟩

• Article dans une revue

Characterization of ultrathin SOI film and application to short channel MOSFETs

Xing Tang, N. Reckinger, G. Larrieu, Emmanuel Dubois, D. Flandre, J.P. Raskin, B. Nysten, A.M. Jonas, V. Bayot

In this study, a very dilute solution (NH4OH:H2O2:H2O 1:8:64 mixture) was employed to reduce the thickness of commercially available SOI wafers down to 3 nm. The etch rate is precisely controlled at 0.11 Å s−1 based on the self-limited etching speed of the solution. The thickness uniformity of the…

Nanotechnology, 2008, 19, pp.165703-1-7. ⟨10.1088/0957-4484/19/16/165703⟩. ⟨hal-00356972⟩