Publications

Affichage de 11601 à 11610 sur 16094


  • Article dans une revue

Comparative analysis for the local piezoelectric properties of ion beam and reactive ion beam etched Pb(Zr,Ti)O-3 thin films

Céline Blach-Legrand, S. Saitzek, Antonio da Costa, R. Desfeux, Caroline Soyer, Denis Remiens

Integrated Ferroelectrics, 2008, 98, pp.230-240. ⟨10.1080/10584580802096614⟩. ⟨hal-00360338⟩

  • Article dans une revue

Comparative Sb and As segregation at the InP on GaAsSb interface

X. Wallart, S. Godey, Y. Douvry, L. Desplanque

Applied Physics Letters, 2008, 93, pp.123119-1-3. ⟨10.1063/1.2991299⟩. ⟨hal-00356947⟩

  • Communication dans un congrès

A 1.2 GHz semi-digital reconfigurable FIR bandpass filter with passive power combiner

A. Flament, A. Frappe, A. Kaiser, B. Stefanelli, A. Cathelin, H. Ezzeddine

34th European Solid-State Circuits Conference, ESSCIRC 2008, 2008, United Kingdom. pp.418-421, ⟨10.1109/ESSCIRC.2008.4681881⟩. ⟨hal-00360806⟩

  • Article dans une revue

High-efficiency uni-travelling-carrier photomixer at 1.55 μm and spectroscopy application up to 1.4 THz

Alexandre Beck, Guillaume Ducournau, Mohammed Zaknoune, Emilien Peytavit, Tahsin Akalin, Jean-Francois Lampin, Francis Mollot, Francis Hindle, Chun Yang, Gaël Mouret

The fabrication of InGaAs/InP uni-travelling-carrier photodiodes integrated with broadband horn antennas and demonstration of photomixing up to 1.8 THz are reported. A radiated power of 1.1 µW at 940 GHz was measured for a photocurrent of only 2.75 mA (50 mW optical power), demonstrating the high…

Electronics Letters, 2008, 44, pp.1320-1322. ⟨10.1049/el:20082219⟩. ⟨hal-00356950⟩

  • Communication dans un congrès

An all-digital delta-sigma RF signal generator for mobile communication transmitters in 90nm CMOS

A. Frappe, B. Stefanelli, A. Flament, A. Kaiser, A. Cathelin

IEEE Radio Frequency Integrated Circuits Symposium, IEEE RFIC 2008, 2008, Atlanta, GA,, United States. pp.13-16, ⟨10.1109/RFIC.2008.4561375⟩. ⟨hal-00360804⟩

  • Article dans une revue

Band-edge photoluminescence and reflectivity of nonpolar (11-20) and semipolar (11-22) GaN formed by epitaxial lateral overgrowth on sapphire

T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennegues, B. Vinter, M. Leroux

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.075308-1-10. ⟨10.1103/PhysRevB.77.075308⟩. ⟨hal-00356987⟩

  • Article dans une revue

Impulsive noise characterization of in-vehicle power line

Virginie Degardin, M. Lienard, Pierre Degauque, E. Simon, Pierre Laly

IEEE Transactions on Electromagnetic Compatibility, 2008, 50, pp.861-868. ⟨10.1109/TEMC.2008.2006851⟩. ⟨hal-00360056⟩