Publications

• Communication dans un congrès

Module radio millimétrique utilisant la synchronisation d'une source 30 GHz par des trains d'impulsions ULB en bande de base

N. Deparis, A. Boé, Christophe Loyez, N. Rolland, P.A. Rolland

15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.7C2-1-3. ⟨hal-00370307⟩

• Communication dans un congrès

HEMT AlSb/InAs pour applications ultra-faible consommation

S. Bollaert, Yannick Roelens, L. Desplanques, N. Wichmannn, A. Shchepetov, X. Wallart, Gilles Dambrine, A. Cappy

15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.5C3-1-4. ⟨hal-00370296⟩

• Communication dans un congrès

Experimental analysis of wave depolarization in arched tunnels

M. Lienard, A. Nasr, J. Molina-Garcia-Pardo, Pierre Degauque

18th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications, PIMRC'07, 2007, Athens, Greece. ⟨10.1109/PIMRC.2007.4394120⟩. ⟨hal-00367728⟩

• Communication dans un congrès

Le projet Polycond : synthèse et caractérisation de polymères conducteurs pour des applications CEM

Jean-Luc Wojkiewicz, Bernard Demoulin, S. Baranowski, Lamine Kone, Mohamed Nedim Ben Slimen, Jean-Claude Carru, Joël Gest, C. Liang, Gérard Leroy

TELECOM'2007 & 5èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications (JFMMA), Mar 2007, Fès, Maroc. ⟨hal-00367726⟩

• Article dans une revue

CVD growth of carbon nanotubes at very low pressure of acetylene

Yu.A. Kasumov, A. Shailos, I.I. Khodos, V.T. Volkov, V.I. Levashov, V.N. Matveev, Sophie Guéron, Mathias Kobylko, Mathieu Kociak, Helene Bouchiat, Vincent Agache, Anne-Sophie Rollier, Lionel Buchaillot, Anne Marie Bonnot, A.Yu. Kasumov

We present a new technique for CVD synthesis of carbon nanotubes without any gas flow and using a very low pressure of acetylene (down to 0.5 mbar). The good quality of obtained nanotubes is confirmed by TEM observation and electron diffraction patterns, Raman spectroscopy and electron transport…

Applied physics. A, Materials science & processing, 2007, 88, pp.687-691. ⟨10.1007/s00339-007-4028-3⟩. ⟨hal-00351737⟩

• Article dans une revue

Adsorption and electronic excitation of biphenyl on Si(100): a theoretical STM analysis

M. Dubois, C. Delerue, A. Rubio

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.041302-1-4. ⟨10.1103/PhysRevB.75.041302⟩. ⟨hal-00283120⟩

• Proceedings/Recueil des communications

Évariste Galois’ algebraic theory, epistemological reflections and educational elements

Raffaele Pisano

Proceedings of the ESU 5th European Summer University History And Epistemology In Mathematics, Vydavatelský servis, pp.147-148, 2007, 978-80-86843-19-3. ⟨hal-04513910⟩

• Article dans une revue

Raman imaging of graphene

D. Graf, F. Molitor, K. Ensslin, C. Stampfer, A. Jungen, C. Hierold, L. Wirtz

Solid State Communications, 2007, 143, pp.44-46. ⟨10.1016/j.ssc.2007.01.050⟩. ⟨hal-00283157⟩

• Article dans une revue

Transmission gaps and sharp resonant states in the electronic transport through a simple mesoscopic device

Housni Al-Wahsh, El Houssaine El Boudouti, Bahram Djafari-Rouhani, L. Dobrzynski, Abdellatif Akjouj

A simple electronic circuit consisting of a single symmetric or asymmetric loop with dangling resonators is designed to obtain possibly large stop bands (where the propagation of electrons is forbidden). Contrary to all known systems of this kind, a spectral transmission gap of nonzero width occurs…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75 (12), pp.125313. ⟨10.1103/PhysRevB.75.125313⟩. ⟨hal-00283159⟩

• Article dans une revue

X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

Nicolas Sarazin, Olivier Jardel, Erwan Morvan, Raphaël Aubry, M. Laurent, M. Magis, Maurice Tordjman, M. Alloui, O. Drisse, J. Di Persio, Marie-Antoinette Di Forte-Poisson, Sylvain Laurent Delage, Nicolas Vellas, Christophe Gaquière, Didier Theron

AlInN/AlN/GaN based HEMTs were fabricated on SiC substrate to demonstrate the high potentiality of these heterostructures. The presented results confirm the high performances reachable by AlInN based technology with an output power of 6.8 W/mm at 10 GHz with a gate length of 0.25 µm. A good…

Electronics Letters, 2007, 43 (23), pp.1317-1318. ⟨10.1049/el:20072598⟩. ⟨hal-00283494⟩