Publications

Affichage de 12161 à 12170 sur 16238


  • Article dans une revue

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

Marie-Antoinette Di Forte-Poisson, Nicolas Sarazin, M. Magis, Maurice Tordjman, Erwan Morvan, Raphaël Aubry, J. Di Persio, Bertrand Grimbert

This paper reports on in situ passivation studies of GaAlN/GaN High electron mobility transistors (HEMT) structures grown by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire and silicon carbide substrates. GaN, GaAlN, AlN and AlN/GaN superlattice (SL) layers have been deposited…

Journal of Crystal Growth, 2007, 298, pp.826-830. ⟨10.1016/j.jcrysgro.2006.10.193⟩. ⟨hal-00285680⟩

  • Communication dans un congrès

Biodétecteur à plasmon de surface couplé à une plateforme microfluidique d'onde acoustique de surface

Maxime Beaugeois, Elisabeth Galopin, Florian Lapierre, Bernard Pinchemel, Mohamed Bouazaoui, V. Thomy, Jean-Christophe Camart

Congrès Général 2007 de la Société Française de Physique, 2007, Grenoble, France. ⟨hal-00285620⟩

  • Communication dans un congrès

Signaling pathway analysis using dielectric spectroscopy : a label free technology for cellular-assays

Vincent Senez, A. Treizebre, Bertrand Bocquet, Dominique Legrand, Joël Mazurier, Christian Slomianny, Eric Leclercq, Dominique Barthès-Biesel

Journées J3N du Réseau National en Nanosciences et Nanotechnologies – Les Nanosciences au cœur des Technologies Convergentes, 2007, Paris, France. ⟨hal-00285621⟩

  • Article dans une revue

Electrical characterizations of paraelectric BST thin films up to 1 THz : realization of microwave phase shifters

Gabriel Vélu, Gregory Houzet, Ludovic Burgnies, Jean-Claude Carru, Aurélien Marteau, Karine Blary, Didier Lippens, Patrick Mounaix, Marc Tondusson, Edwin Nguema Agnandji

BST thin films have been deposited with a sol-gel technique on 4cm 2 sapphire. Electrical characterizations have been performed in a very large frequency range. From 1 kHz to 500 GHz, the dielectric constant ϵ r is around 300 with quasi no frequency dispersion. In the 500 GHz to 1 THz range, the…

Ferroelectrics, 2007, 353 (1), pp.29-37. ⟨10.1080/00150190701367036⟩. ⟨hal-00285626⟩

  • Article dans une revue

Comprehension of the S(V)LS mechanism growth of silicon-based nanowires

D. Hourlier, P. Perrot

Comptes Rendus. Chimie, 2007, 10, pp.658-665. ⟨hal-00285649⟩

  • Article dans une revue

Selective filtering of confined optical waves in a straight waveguide coupled to a lateral stub

Yan Pennec, Maxime Beaugeois, Bahram Djafari-Rouhani, Abdellatif Akjouj, Jerome O. Vasseur, L. Dobrzynski, Jean-Pierre Vilcot, Mohamed Bouazaoui, J.P. Vigneron

We report numerical simulations, based on a finite difference time domain (FDTD) method, of light propagation in two-dimensional semiconductor micro optical waveguides coupled to one or several lateral stubs. The incident wave which is of transverse magnetic polarization (TM) is either…

Journal of Optics A: Pure and Applied Optics, 2007, 9, pp.S431-S436. ⟨10.1088/1464-4258/9/9/S25⟩. ⟨hal-00285664⟩