Publications

• Article dans une revue

Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices

Xing Tang, N. Reckinger, V. Bayot, Christophe Krzeminski, Emmanuel Dubois, A. Villaret, D.C. Bensahel

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory…

IEEE Transactions on Nanotechnology, 2006, 5 (6), pp.649-656. ⟨10.1109/TNANO.2006.883481⟩. ⟨hal-00138655⟩

• Article dans une revue

An optimal high contrast e-beam lithography process for the patterning of dense fin networks

F. Fruleux, J. Penaud, Emmanuel Dubois, M. Francois, M. Muller

There are many difficulties to overcome towards the integration of 10 nm CMOS technology. One such major challenge is to keep a tight control of the leakage current of devices while increasing the current drive at a reduced supply voltage. In this context, multi-gated structures, which are used to…

Materials Science and Engineering: C, 2006, 26 (5-7), pp.893-897. ⟨10.1016/j.msec.2005.09.017⟩. ⟨hal-00138653⟩

• Article dans une revue

Transformation of hydrogen silsesquioxane properties with RIE plasma treatment for advanced multiple-gate MOSFETs

J. Penaud, F. Fruleux, Emmanuel Dubois

Keeping in line with Moore's law requires increasing efforts in the development of alternative electronic devices. Multiple-gate transistors are very promising in order to suppress short-channel effects and to increase the current drive. Nevertheless, the fabrication of such devices represents…

Applied Surface Science, 2006, 253 (1), pp.395-399. ⟨10.1016/j.apsusc.2006.06.021⟩. ⟨hal-00138654⟩

• Communication dans un congrès

Growth of molecular nanostructures on Si using SAMs of long-chain alkytrichlorosilanes

L. Patrone, S. Desbief, D. Goguenheim, D. Vuillaume

Trends in NanoTechnologies, TNT2006, 2006, Grenoble, France. ⟨hal-00127136⟩

• Communication dans un congrès

Continuous wave THz generation based on a dual-frequency laser and a LTG - InGaAs photomixer

R. Czarny, M. Alouini, X. Marcadet, S. Bansropun, J.L. Doualan, R. Moncorge, Jean-Francois Lampin, M. Krakowski, D. Dolfi

International Topical Meeting on Microwaves Photonics, 2006, France. pp.290-292, ⟨10.1109/MWP.2006.346534⟩. ⟨hal-00247427⟩

• Communication dans un congrès

THz pulses on planar Goubau lines : transmitting, reflecting and coupling topologies

Tahsin Akalin, Emilien Peytavit, L. Desplanque, Jean-Francois Lampin

GDR ONDES-GT5 et GDR-E THz, Journées Thématiques 'Champ proche et THz', 2006, Montpellier, France. ⟨hal-00243990⟩

• Communication dans un congrès

Room temperature single-electron operation and fabrication of downscaled self-aligned single-dot memory devices

Xing Tang, N. Reckinger, V. Bayot, Christophe Krzeminski, Emmanuel Dubois, A. Villaret, D. Bensahel

Materials Research Society Spring Meeting, MRS Spring 2006, 2006, San Francisco, CA, United States. ⟨hal-00244026⟩

• Communication dans un congrès

A new organic memory FET

C. Novembre, David Guérin, K. Lmimouni, C. Gamrat, D. Vuillaume

Third Meeting on Molecular Electronics, ElecMol'06, 2006, Grenoble, France. ⟨hal-00163253⟩

• Article dans une revue

Evaluation de la méthode impact-écho comme outil de détection des cavités

C. Leonard, Bogdan Piwakowski, I. Shahrour

Cet article présente un essai d’utilisation de la méthode impact-écho pour la détection de cavités souterraines. Cette méthode a largement a été appliquée avec succès pour la recherche de défauts dans des structures en béton. On montre dans cet article, par simulations numériques, que le transfert…

Revue française de Géotechnique, 2006, 116, pp.27-40. ⟨10.1051/geotech/2006116027⟩. ⟨hal-00243665⟩

• Communication dans un congrès

Dynamical study of the electrical transport through molecular tunnel junctions with consideration of interface impurities

N. Clement, S. Pleutin, O. Seitz, S. Lenfant, D. Cahen, D. Vuillaume

Third Meeting on Molecular Electronics, ElecMol'06, 2006, Grenoble, France. ⟨hal-00163251⟩