Publications
Affichage de 13071 à 13080 sur 16104
Optimisation of the parameters of an extended defects model applied to non-amorphising implants
E. Lampin, F. Cristianio, Y. Lamrani, D. Connetable
Materials Science and Engineering: B, 2005, 124-125, pp.397-400. ⟨hal-00138395⟩
Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device
Christophe Krzeminski, Emmanuel Dubois, Xiaohui Tang, Nicolas Reckinger, André Crahay, Vincent Bayot
Materials Research Society Fall Meeting, Nov 2004, Boston, United States. pp.D1.6.1. ⟨hal-00603411⟩
Polysilsesquioxane derived ceramic foams with gradient porosity
J. Zeschky, T. Höfner, C. Arnold, R. Weissmann, D. Bahloul-Hourlier, M. Scheffler, P. Greil
Acta Materialia, 2005, 53, pp.927-937. ⟨10.1016/j.actamat.2004.10.039⟩. ⟨hal-00247490⟩
Adsorption of n-alkanes on silicon nitride nanopowder
L.S. Cerovic, S.K. Milonjic, D. Bahloul-Hourlier
Journal of the American Ceramic Society, 2005, 88, pp.1875-1878. ⟨10.1111/j.1551-2916.2005.00371.x⟩. ⟨hal-00247489⟩
Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps
Y. Guhel, B. Boudart, N. Vellas, Christophe Gaquière, E. Delos, D. Ducatteau, Z. Bougrioua, Marie Germain
Solid-State Electronics, 2005, 49, pp.1589-1594. ⟨hal-00154914⟩
Fabrication and characterization of 100-nm In0.53Ga0.47As-In0.52Al0.48As double-gate HEMTs with two separate gate controls
Nicolas Wichmann, I. Duszynski, X. Wallart, S. Bollaert, A. Cappy
IEEE Electron Device Letters, 2005, 26, pp.601-603. ⟨hal-00154894⟩
Modal waves solved in complex wave number
Wei-Jiang Xu, Frédéric Jenot, Mohamed Ourak
2005, pp.156-163. ⟨hal-00140395⟩
Characterization and modeling of in-vehicle power line propagation channel
M. Olivas-Carrion, Virginie Degardin, M. Lienard, Pierre Degauque
Proceedings of the 5th International Conference on ITS Telecommunications, ITST 2005, 2005, Brest, France. ⟨hal-00140789⟩
Surface polarization enhancement and switching properties of small ferroelectric particles
Laurent Baudry
IMF-11, Sep 2005, Iguassu Falls, Brazil. pp.IMF-01-015, ⟨10.1080/00150190600678681⟩. ⟨hal-00131106⟩
Reactive ion etching of a 20 nanometers tungsten gate using a SF$_6$/N$_2$ chemistry and hydrogen silsesquioxane hard mask resist
G. Larrieu, Emmanuel Dubois
Journal of Vacuum Science and Technology, 2005, 23 (5), pp.2046-2050. ⟨10.1116/1.2050654⟩. ⟨hal-00125635⟩