Publications

Affichage de 13161 à 13170 sur 16063


  • COMM

Effet du désordre dans un démultiplexeur nanométrique plasmonique

Maxime Beaugeois, Abdellatif Akjouj, Bahram Djafari-Rouhani, Jerome O. Vasseur, Yan Pennec, Mohamed Bouazaoui, Jean-Pierre Vilcot, Sophie Maricot, J.P. Vigneron, L. Dobrzynski

Congrès Général de la Société Française de Physique et de la Belgian Physical Society, Aug 2005, Lille, France. ⟨hal-00130845⟩

  • COMM

MicroRaman analysis of resistance ohmic contact to n-AlGaN/GaN

A. Soltani, S. Touati, Virginie Hoel, Jean-Claude de Jaeger, J. Laureyns, Y. Cordier, C. Marhic, A. Djouadi, C. Dua

Proceedings of the 16th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides, Diamond 2005, 2005, Toulouse, France. ⟨hal-00131350⟩

  • COMM

SU-8 based arch-like microfluidic microchannels using single mask/single step photolithography

M. Gaudet, S. Arscott, J.C. Camart, L. Buchaillot

2005, pp.1189-1192. ⟨hal-00130826⟩

  • COMM

MEMS reliability : metrology set-up for investigation of fatigue causes

O. Millet, O. Blanrue, Bernard Legrand, D. Collard, L. Buchaillot

2005, pp.483-486. ⟨hal-00125627⟩

  • COMM

Empirical MOSFET modelling for RF circuit design

A. Siligaris, Gilles Dambrine, F. Sischka, Francois Danneville

2005, 4 pp. ⟨hal-00147493⟩

  • COMM

A Bi-stable Micro-machined Piezoelectric Transducer for Mechanical to Electrical Energy Transformation .

Karim Dogheche, B. Cavallier, P. Delobelle, L. Hirsinger, Eric Cattan, Denis Remiens, M. Marzencki, B. Charlot, S. Ballandras, Skandar Basrour

17th International Symposium on Integrated Ferroelectrics (ISIF 2005), Shanghai, China, april 17-20,, 2005, China. ⟨hal-00135677⟩

  • COMM

Metamaterial-based transmission line : the fin line approach

A. Marteau, T. Decoopman, M.F. Foulon, Eric Lheurette, D. Lippens

2005, 4 pp. ⟨hal-00154901⟩

  • ART

Strain, size and composition of InAs quantum sticks, embedded in InP, determined via X-ray anomalous diffraction and diffraction anomalous fine structure in grazing incidence

A. Letoublon, V. Favre-Nicolin, Hubert Renevier, M.G. Proletti, C. Monat, M. Gendry, O. Marty, C. Priester

Physica B: Condensed Matter, 2005, 357, pp.11-15. ⟨hal-00154906⟩

  • COMM

Monte Carlo characterization of fabricated partially-depleted SOI MOSFETs : high-frequency performance

R. Rengel, M.J. Martin, G. Pailloncy, Gilles Dambrine, Francois Danneville

2005, pp.373-376. ⟨hal-00154892⟩