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Affichage de 1321 à 1330 sur 15923

Article dans une revue

Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes

Martin Doublet, N. Defrance, Etienne Okada, Loris Pace, Thierry Duquesne, Bouyssou Emilien, Arnaud Yvon, Nadir Idir, Jean-Claude de Jaeger

In this paper, a methodology is proposed for studying the current collapse effects of Gallium Nitride (GaN) power diodes and the consequences on the dynamic on-resistance (RON). Indeed, the growing interest of GaN based, high frequency power conversion requires an accurate characterization and a…

Electronics, 2023, 12 (9), pp.2007. ⟨10.3390/electronics12092007⟩. ⟨hal-04107504⟩

Article dans une revue

Relation between thermal quenching of photoluminescence and negative capacitance on InGaN/GaN multiple quantum wells in p-i-n structure

Orhan Özdemir, Hanife Baş, Neslihan Ayarcı Kuruoğlu, Kutsal Bozkurt, Mustafa Aydın, Fahrettin Sarcan, Ayşe Erol, Bandar Alshehri, Karim Dogheche, El Hadj Dogheche

Temperature-dependent photoluminescence (PL) and surface photovoltage (SPV) measurements were carried out to detect radiative and non-radiative transitions on InGaN/GaN quantum well (QW) blue light-emitting device (LED). The emissions, peaking at 3.03 eV and 2.89 eV, were present in both PL and SPV…

Journal of Luminescence, 2023, 257, pp.119749. ⟨10.1016/j.jlumin.2023.119749⟩. ⟨hal-03997376⟩

Article dans une revue

Design and fabrication of an inverted hat antenna paired with a filled cavity for radio-navigation applications

Z. Hamouda, S. Azaizia, M. Hideche, A. Zemmam, T. Lasri

Antennas installed on aircraft are used for communications as well as for various radio navigation systems such as direction finders, distance measuring systems, and altimeters. Generally, these systems use blade antennas operating in the L frequency band. Recently, inverted-hat empty section…

International Journal of Microwave and Wireless Technologies, 2023, 15 (4), pp.641 - 648. ⟨10.1017/S1759078722000629⟩. ⟨hal-03694832⟩

Article dans une revue

Effect of different separation frequencies of the two-tone input signal on the output power of GaN on SiC HEMT

Mohammad Abdul Alim, Mayahsa Ali, Christophe Gaquière

This research aims to determine whether a GaN HEMT device made on SiC substrate has a memory effect. To accomplish this, the intermodulation distortion technique with the separation frequency (Δf) of the two-tone input signals was applied at three different frequency levels, one at f1 = 53 MHz and…

Micro and Nanostructures, 2023, 177, pp.207547. ⟨10.1016/j.micrna.2023.207547⟩. ⟨hal-04034333⟩

Article dans une revue

Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

Marie Lesecq, Yassine Fouzi, Ali Abboud, N. Defrance, Francois Vaurette, Saliha Ouendi, Etienne Okada, Marc Portail, Micka Bah, Daniel Alquier, Jean-Claude de Jaeger, Eric Frayssinet, Yvon Cordier

In this paper, non-alloyed ohmic contacts regrown by molecular beam epitaxy (MBE) are fabricated on AlGaN/ GaN high-electron-mobility transistors on 6H-SiC substrate. Low ohmic contact resistance of 0.13 Ω.mm is obtained. This paper demonstrates the high frequency and high power performance…

Microelectronic Engineering, 2023, 276, pp.111998. ⟨10.1016/j.mee.2023.111998⟩. ⟨hal-04084512⟩

Article dans une revue

A novel cloud approach for connected vehicles

Geoffrey Wilhelm, Marwane Ayaida, Hacène Fouchal

Cooperative intelligent transport systems (C-ITSs) are being deployed all around the world. Shortly, in addition to vehicles, bicycles, pedestrians, buses, and all moving equipment will be compatible with C-ITS. These systems are connected through wireless local area networks based on WIFI IEEE 802…

Applied Sciences, 2023, Special Issue Cooperative-Intelligent Transport Systems: New Challenges, 13 (9), pp.5514. ⟨10.3390/app13095514⟩. ⟨hal-04188109⟩

Article dans une revue

Friction dynamics of elasto-inertial turbulence in Taylor–Couette flow of viscoelastic fluids

Masoud Moazzen, Tom Lacassagne, Vincent Thomy, S. Amir Bahrani

Dynamic properties of elasto-inertial turbulence (EIT) are studied in a Taylor–Couette geometry. EIT is a chaotic flow state that develops upon both non-negligible inertia and viscoelasticity. A combination of direct flow visualization and torque measurement allows to verify the earlier onset of…

Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 2023, 381 (2246), ⟨10.1098/rsta.2022.0300⟩. ⟨hal-04215397⟩

Article dans une revue

Development of nanomaterial enabling highly sensitive SALDI‐MS peptide analysis

Aline Cournut, Ioana Silvia Hosu, Flavie Braud, Paul Moustiez, Yannick Coffinier, Christine Enjalbal, Claudia Bich

RationaleSALDI-MS (Surface-Assisted Laser Desorption/Ionisation Mass Spectrometry) is an approach derived from MALDI-MS (Matrix-Assisted Laser Desorption/Ionisation) which overcomes the drawbacks associated with the use of organic matrices required to co-crystallize with the analytes. Indeed,…

Rapid Communications in Mass Spectrometry, 2023, 37 (8), pp.e9476. ⟨10.1002/rcm.9476⟩. ⟨hal-03966738⟩

Brevet

Optical detection method

Vincent Senez, Alexis Vlandas, Sebastien Lamant, Bernard Cathala, Celine Moreau, Gabrielle Veronese, Sophie Bozonn, Elisabeth Laville, Megane Cleret

A process for detecting the sensitivity of one or more polymers and/or of one or more mixtures of polymers to a compound, including the steps of exposing a plurality of individualized micro-deposits including the polymer(s) and/or the mixture(s) of polymers to the compound, and detecting, by…

United States, Patent n° : US11635372 (B2) 2023-04-25. 2023, N° de priorité : FR20170054926 20170602 - N° de demande : US201816618605 20180601. ⟨hal-04540652⟩

Article dans une revue

Nanoscale electronic transport at graphene/pentacene van der Waals interface

Michel Daher Mansour, Jacopo Oswald, Davide Beretta, Michael Stiefe, Roman Furrer, Michel Calame, Dominique Vuillaume

We report a study on the relationship between structure and electron transport properties of nanoscale graphene/pentacene interfaces. We fabricated graphene/pentacene interfaces from 10-30 nm thick needle-like pentacene nanostructures down to two-three layers (2L-3L) dendritic pentacene islands,…

Nanoscale, 2023, 15, pp.9203-9213. ⟨10.1039/D2NR06682C⟩. ⟨hal-04076826v2⟩