Publications

Affichage de 1341 à 1350 sur 16135


  • Communication dans un congrès

Automated and Robotic On-Wafer Probing Station

Cerine Mokhtari, Clément Lenoir, Mohamed Sebbache, Kamel Haddadi

Emergent microwave and millimetre-wave technologies call for new and more accurate characterization techniques. In particular, repeatability of on-wafer calibration and measurements methods must be addressed. In this work, we are presenting the hardware and software development of a new…

2023 IEEE Symposium on Wireless Technology & Applications (ISWTA), Aug 2023, Kuala Lumpur, Malaysia. pp.99-102, ⟨10.1109/ISWTA58588.2023.10249964⟩. ⟨hal-04268605⟩

  • Article dans une revue

Highly Conductive Tungsten Suboxide Nanotubes

Cécile Huez, Maxime Berthe, Florence Volatron, Jean-Michel Guigner, Dalil Brouri, Lise-Marie Chamoreau, Benoît Baptiste, Dominique Vuillaume, Anna Proust

We demonstrate a high electron conductivity (> 10^2 S/cm and up to 10^3 S/cm) of tungsten suboxide W18O(52.4-52.9)(or equivalently WO(2.91-2.94)) nanotubes (2 to 3 nm in diameter, ca. micrometer long). The conductivity is measured in the temperature range 120 to 300K by a four probe scanning…

Journal of Applied Physics, 2023, 134, pp.134301. ⟨10.1063/5.0170761⟩. ⟨hal-04178947v2⟩

  • Article dans une revue

Highly Si‐doped GaN regrown by MOVPE for ohmic contact applied to quaternary barrier based HEMT

Charles Pitaval, Cédric Lacam, N. Defrance, Christophe Gaquière, Nicolas Michel, Olivier Parillaud, Sylvain Delage

The quaternary barrier InAlGaN is suitable for GaN HEMT power microwave applications. High doping of semiconductor under the drain and source is a known suitable solution to achieve low ohmic contact resistance. However, InAlGaN quaternary alloys require low thermal budget to avoid indium…

Physica Status Solidi A (applications and materials science), 2023, 220 (16), pp.2200476. ⟨10.1002/pssa.202200476⟩. ⟨hal-03875911⟩

  • Article dans une revue

High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers

G. Di Gioia, E. Frayssinet, M. Samnouni, V. Chinni, P. Mondal, J. Treuttel, X. Wallart, M. Zegaoui, Guillaume Ducournau, Yannick Roelens, Yvon Cordier, Mohamed Zaknoune

Quasi-vertical gallium nitride (GaN) Schottky diodes on silicon carbide (SiC) substrates were fabricated for frequency multiplier applications. The epitaxial structure employed had an n− layer of 590 nm with doping 6.6 × 1016 cm−3, while the n+ layer was 950 nm thick, with doping 2 × 1019 cm−3.…

Journal of Electronic Materials, 2023, 52, pp.5249-5255. ⟨10.1007/s11664-023-10499-3⟩. ⟨hal-04115301⟩