Publications

• Communication dans un congrès

Ultrasonic cavitation in thin liquid layer

Bertrand Dubus, A. Moussatov, C. Campos-Pozuelo

2004, pp.923-924. ⟨hal-00142048⟩

• Article dans une revue

Semiconducting surface reconstruction of p-type Si(100) substrates at 5K

Luis Perdigao, D. Deresmes, B. Grandidier, M. Dubois, Christophe Delerue, Guy Allan, Didier Stiévenard

We report scanning tunneling microscopy (STM) studies of the technologically important Si(100) surface that reveal at 5 K the coexistence of stable surface domains consisting of the p(2 x 1) reconstruction along with the c(4 x 2) and p(2 x 2) reconstructions. Using highly resolved tunneling…

Physical Review Letters, 2004, 92, pp.216101/1-4. ⟨10.1103/PhysRevLett.92.216101⟩. ⟨hal-00141285⟩

• Communication dans un congrès

Optimisation and simulation of an alternative nano-flash memory : the SASEM device

Christophe Krzeminski, Emmanuel Dubois, Xing Tang, N. Reckinger, A. Crahay, V. Bayot

2004, pp.45-50. ⟨hal-00140991⟩

• Communication dans un congrès

Polymer-based monolithic columns prepared in microchannels for proteomics applications

S. Le Gac, S. Arscott, C. Cren, C. Rolando

17th International Symposium on Microscale Separations and Capillary Electrophoresis, 2004, Salzburg, Austria. ⟨hal-00141033⟩

• Communication dans un congrès

Modélisation et simulation de la technologie des MOS ultimes

Evelyne Lampin, Christophe Krzeminski, Tahsin Akalin, V. Cuny

Journées Nationales Nanoélectronique, 2004, Aussois, France. ⟨hal-00141007⟩

• Communication dans un congrès

A multi-mode continuously-tunable lowpass filter for zero-IF mobile applications

D. Chamla, A. Kaiser, A. Cathelin, D. Belot

2004, pp.95-98. ⟨hal-00140982⟩

• Communication dans un congrès

Caractérisation expérimentale de charges appliquées à la modélisation CEM d'équipements électroniques automobiles

S. Egot, M. Klinger, L. Kone, S. Baranowski, B. Demoulin

Actes du 12ème Colloque International et Exposition sur la Compatibilité Electromagnétique, CEM'04, 2004, Toulouse, France. ⟨hal-00142319⟩

• Article dans une revue

Raman characterization of Mg+ ion-implanted GaN

B. Boudart, Y. Guhel, J. C. Pesant, P. Dhamelincourt, M. A. Poisson

Mg+ ions were implanted at room temperature in n-type hexagonal GaN for the device isolation purposes. The implantation dose varied from 7.5 × 1012 to 1016 ions cm−2. We performed resonance Raman spectroscopy and DC electrical measurements in order to monitor the structural and electrical changes…

Journal of Physics: Condensed Matter, 2003, 16 (2), pp.S49. ⟨10.1088/0953-8984/16/2/006⟩. ⟨hal-02936052⟩

• Thèse

Gravure par faisceau d'ions de films minces de titano-zirconate de plomp (PZT) : étude des dégradations engendrées et contribution à l'intégration aux microsystèmes, Ion beam etching of lead titanate-zirconate (PZT) thin films : study of damages induced and contribution to the integration in microsystems

Caroline Soyer

Ces travaux, relatifs à la gravure par faisceau d'ions de films minces de PZT, présentent un ensemble de résultats pouvant être scindés en deux parties. Tout d'abord, nous avons mené une étude originale dont le but est de tenter d'appréhender les mécanismes d'interactions entre…, First of all, we have carried out an original study of which the aim is to try to understand the mechanisms of interactions between an ion beam (reactive or not) and the PZT surface. We have underlined various degradations of material, as well microstructural as electrical. These damages evolve…

Electronique. Université de Valenciennes et du Hainaut-Cambrésis, 2003. Français. ⟨NNT : 2003VALE0038⟩. ⟨hal-00162746⟩

• Pré-publication, Document de travail

Dispersive charge transport along the surface of an insulating layer observed by Electrostatic Force Microscopy

J. S. Lambert, G. de Loubens, C. Guthmann, M. Saint-Jean, Thierry Melin

We report the observation in the direct space of the transport of a few thousand charges submitted to atunable electric field along the surface of a silicon oxide layer. Charges are both deposited and observedusing the same Electrostatic Force Microscope. During the time range accessible to our…

2003. ⟨hal-00000962⟩