Publications

• Article dans une revue

Validity and accuracy of equivalent circuit models of passive inductive meshes. Definition of a novel model for 2D Grids

Ronan Sauleau, Philippe Coquet, J.P. Daniel

International Journal of Infrared and Millimeter Waves, 2002, 23 (3), pp.475-498. ⟨hal-00555114⟩

• Article dans une revue

0.25 µm fully-depleted SOI MOSFET's for RF mixed analog-digital circuits, including a comparison with partially-depleted devices for high frequency noise parameters

M. Vanmackelberg, C. Raynaud, O. Faynot, J.L. Pelloie, C. Tabone, A. Grouillet, F. Martin, Gilles Dambrine, L. Picheta, E. Mackowiak, P. Llinares, D. Vanhoenacker, J.P. Raskin

The purpose of this paper is to completely describe the low and high frequency performance including microwave noise parameters of 0.25 μm fully depleted (FD) silicon-on-insulator (SOI) devices and to compare the noise performance with 0.25 μm partially depleted (PD) devices. These FD devices…

Solid-State Electronics, 2002, 46 (3), pp.379-386. ⟨10.1016/S0038-1101(01)00120-4⟩. ⟨hal-00147836⟩

• Article dans une revue

Noisy echo detection using microwave correlation radiometry

A. Benlarbi Delai, Bertrand Bocquet

A random signal system dedicated to echo detection and location is described. Using the correlation radiometry principle, this system provides the ability to locate mismatched discontinuity inserted in a TEM cell. Extension to short-range applications, such as level gauging, anticollision radar,…

Electronics Letters, 2002, 38 (5), pp.229-230. ⟨10.1049/el:20020146⟩. ⟨hal-00147880⟩

• Article dans une revue

Experimental study of hot electron inelastic scattering rate in p-type InGaAs

D. Sicault, R. Teissier, F. Pardo, J.-L. Pelouard, F. Mollot

The inelastic scattering rates of electrically injected minority hot electrons measured using a continuous-wave spatially resolved electroluminescence spectroscopy are reported. To our knowledge, this constitutes direct experimental determination of this parameter related to the individual…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65 (12), pp.121301.1-121301.4. ⟨10.1103/PhysRevB.65.121301⟩. ⟨hal-00324283⟩

• Article dans une revue

0.12 μm transferred-substrate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on silicon wafer

S. Bollaert, X. Wallart, Sylvie Lepilliet, A. Cappy, E. Jalaguier, S. Pocas, B. Aspar

New In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2-in Silicon substrate with 0.12 μm T-shaped gate length. These new TS-HEMTs exhibit typical drain currents of 450 mA/mm and extrinsic…

IEEE Electron Device Letters, 2002, 23 (2), pp.73-75. ⟨10.1109/55.981310⟩. ⟨hal-00147840⟩

• Article dans une revue

A highly directive dipole antenna embedded in a Fabry-Perot type cavity

Tahsin Akalin, Jérôme Danglot, Olivier Vanbésien, Didier Lippens

We investigate the origin of the directivity of a dipole antenna embedded in a dielectric slab Fabry-Perot cavity. It is shown that the focusing effect is due to the angular selection rules in the Bragg-type mirror and is directly correlated to the frequency selectivity of the cavity. For a 6 GHz…

IEEE Microwave and Wireless Components Letters, 2002, 12 (2), pp.48-50. ⟨10.1109/7260.982873⟩. ⟨hal-00148630⟩

• Article dans une revue

Theory of acoustic scattering by supported ridges at a solid-liquid interface

Jerome O. Vasseur, A. Khelif, J. Vasseur, Ph. Lambin, Bahram Djafari-Rouhani, P. Deymier

Physical Review E , 2002, 65 (3), ⟨10.1103/PhysRevE.65.036601⟩. ⟨hal-03302025⟩

• Chapitre d'ouvrage

Micro-actionneurs en alliages à mémoire de forme

N. Chaillet, L. Buchaillot, J. Abadie, I. Roch, C. Lexcellent

CUGAT O. Micro-actionneurs électroactifs, Hermès Sciences, pp.179-223, 2002. ⟨hal-00132049⟩

• Article dans une revue

Magnonic spectral gaps and discrete transmission in serial loop structures

A Mir, H Al Wahsh, Abdellatif Akjouj, Bahram Djafari-Rouhani, L. Dobrzynski, Jerome O. Vasseur

Journal of Physics: Condensed Matter, 2002, 14 (3), pp.637-655. ⟨10.1088/0953-8984/14/3/331⟩. ⟨hal-03302129⟩

• Article dans une revue

Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density

D. Vignaud, Jean-Francois Lampin, E. Lefebvre, M. Zaknoune, F. Mollot

Applied Physics Letters, 2002, 80, pp.4151. ⟨hal-00018489⟩