Publications
Affichage de 14651 à 14660 sur 16182
Contrôle santé intégré par ondes de Lamb. Application à la caractérisation d'impacts basse vitesse dans des structures aéronautiques composites
Sébastien Grondel, Christophe Delebarre, Jamal Assaad
2002, pp.344-347. ⟨hal-00149924⟩
Long dephasing time and high temperature conductance fluctuations in open InGaAs quantum dot
Benoit Hackens, François Delfosse, Sébastien Faniel, Cédric Gustin, Hervé Boutry, X. Wallart, S. Bollaert, A. Cappy, Vincent Bayot
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 66, pp.241305/1-4. ⟨10.1103/PhysRevB.66.241305⟩. ⟨hal-00147835⟩
Improvement of the high frequency performance of HEMTs by bufferless technology
J. Mateos, T. Gonzales, D. Pardo, S. Bollaert, X. Wallart, A. Cappy
2002, pp.173-176. ⟨hal-00147849⟩
Supercritical parametric phase conjugation of ultrasound. Numerical simulation of nonlinear and non-stationary mode
A. Merlen, Vladimir Preobrazhensky, Philippe Pernod
Journal of the Acoustical Society of America, 2002, 112, pp.2656-2665. ⟨hal-00148688⟩
Efficient and unusual intraband optical transitions in silicon nanocrystals
Christophe Delerue, Guy Allan
Materials Research Society Fall Meeting, 2002, Boston, MA, United States. ⟨hal-00149680⟩
Theory of silicon nanocrystals
Christophe Delerue, Guy Allan, Michel Lannoo
NATO Advanced Research Workshop : Towards the first silicon laser, 2002, Trento, Italy. ⟨hal-00149682⟩
Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density
D. Vignaud, Jean-Francois Lampin, E. Lefebvre, M. Zaknoune, F. Mollot
Applied Physics Letters, 2002, 80, pp.4151-4153. ⟨hal-00148648⟩
Etude par EFM des propriétés de charge d'ilots semiconducteurs de taille nanométrique
Thierry Melin, D. Deresmes, D. Stievenard
Forum des microscopies à sonde locale, 2002, Spa, Belgique. ⟨hal-00149683⟩
Some key features of the Ga1-xInxAs surface reactivity to phosphorus
X. Wallart, C. Priester, D. Deresmes, F. Mollot
2002, pp.107-108. ⟨hal-00148666⟩
MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances
Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, Virginie Hoel, A. Minko, N. Vellas, Christophe Gaquière, Jean-Claude de Jaeger, B. Dessertenne, S. Cassette, Et Al.
2002, pp.99-100. ⟨hal-00149696⟩