Publications

• Communication dans un congrès

A numerical approach of acoustic wave phase conjugation in active media

S. Ben Khelil, A. Merlen, Vladimir Preobrazhensky, Philippe Pernod

5th International Conference on Mathematical and Numerical Aspects of Waves Propagation, Waves'2000, 2000, Santiago de Compostela, Spain. ⟨hal-00158464⟩

• Article dans une revue

Optimization of a low-frequency ultrasonic technique to monitor the change in physical states in viscoelastic media : gelation process

Georges Nassar, Bertrand Nongaillard, Y. Noël

Journal of the Acoustical Society of America, 2000, 107, pp.2735-2743. ⟨hal-00159073⟩

• Article dans une revue

Elaboration and characterization of PNZT thin films deposited on silicon by RF cathodic sputtering

T. Haccart, Eric Cattan, Denis Remiens

Pb(Zr,Ti)O3 (PZT) and Pb(Zr,Ti,Nb)O3 (PNZT) thin films have been grown on platinized silicon substrates by RF magnetron sputtering followed by a post-annealing treatment. The niobium, Nb, concentration varied from 1 to 7 at.% by increment of 1 at.% The effects of the Nb introduction on the PZT…

European Physical Journal: Applied Physics, 2000, 11, pp.103-106. ⟨10.1051/epjap:2000150⟩. ⟨hal-00158541⟩

• Article dans une revue

Microwave radiometric imaging (MWI) for the characterisation of breast tumours

Stéphane Mouty, Bertrand Bocquet, Roger Ringot, N. Rocourt, Patrick Devos

We have developed a new prototype of microwave radiometric imaging devoted to the measurement of the temperature inside a dissipative media. The main application we are looking for, is the non-invasive thermometry of human tissues. We obtain quite satisfactory results in the early characterisation…

European Physical Journal: Applied Physics, 2000, 10 (1), pp.73-78. ⟨10.1051/epjap:2000121⟩. ⟨hal-00158135⟩

• Autre publication scientifique

Contribution à la réalisation technologique de transistors à effet de champ dans les filières GaAs, InP et GaN pour l'amplification de puissance hyperfréquence

B. Boudart

2000. ⟨hal-00159048⟩

• Communication dans un congrès

Deep traps related effects in GaN MESFET's grown on saphire substrate

A. Chini, G. Meneghesso, E. Zanoni, M. Manfredi, M. Pavesi, B. Boudart, Christophe Gaquière

10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159037⟩

• Communication dans un congrès

Dry etching for gate recessing on AlGaN/GaN HEMTs

Y. Guhel, B. Boudart, M.A. Poisson, Jean-Claude de Jaeger

10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159034⟩

• Communication dans un congrès

GaN MESFETs for power and high temperature applications

B. Boudart, S. Trassaert, Christophe Gaquière, D. Theron, Y. Crosnier, François Huet, M.A. Poisson, I. Daumiller, E. Kohn

NearEst Miniworkshop on Advances in the Wide Bandgap Electronics and Opto-Electronics, 2000, Padova, Italy. ⟨hal-00159032⟩

• Article dans une revue

Raman characterization of GaN synthetised by N implantation in GaAs substrate

B. Boudart, J.C. Pesant, Jean-Claude de Jaeger, P.A. Dhamelincourt

Journal of Raman Spectroscopy, 2000, 31, pp.615-618. ⟨hal-00158978⟩

• Article dans une revue

An analog beam-forming circuit for ultrasound imaging using switched-current delay lines

Bruno Stefanelli, I. O'Connor, L. Quiquerez, Andreas Kaiser, D. Billet

IEEE Journal of Solid-State Circuits, 2000, 35, pp.202-211. ⟨hal-00158512⟩