Publications
Affichage de 16051 à 16060 sur 16252
Photolithography for recessed lift-off technology application to low temperature GaAs MISFET’s ohmic contacts
B. Boudart, Christophe Robert, Didier Theron, R. Westphalen
4th European Workshop on Heterostructure Technology (HETECH), 1994, Ulm, Germany. ⟨hal-01654282⟩
Temperature measurements of LT GaAs diodes
R. Westphalen, B. Boudart, Didier Theron, X. Wallart, Y. Druelle, Y. Crosnier
Materials Science and Engineering: B, 1993, 22 (1), pp.78 - 81. ⟨10.1016/0921-5107(93)90227-E⟩. ⟨hal-01647734⟩
Efficient scaling of MOSFETS in the 50 nm regime using a recessed channel
Emmanuel Dubois, Bricout Paul-Henri
International Symposium Semiconductor Device Research (ISDRS), Dec 1993, Charlottesville (Virginia), United States. ⟨hal-04248357⟩
Theory of rare-earth impurities in semiconductors
Christophe Delerue, Michel Lannoo, Guy Allan
MRS Fall Meeting, Nov 1993, Boston, United States. ⟨hal-03316843⟩
Acoustic resonances of adsorbed wires and channels
B Djafari-Rouhani, Leonard Dobrzynski
Journal of Physics: Condensed Matter, 1993, 5 (44), pp.8177-8194. ⟨10.1088/0953-8984/5/44/010⟩. ⟨hal-04070088⟩
Study of acoustic signatures for non-spherical curved acoustic lens
Wei-Jiang Xu, Mohamed Ourak, Mohammadi Ouaftouh, Bertrand Nongaillard
Proceedings of IEEE Ultrasonics Symposium ULTSYM-94, Oct 1993, Cannes, France. pp.1413-1416 vol.3, ⟨10.1109/ultsym.1994.401856⟩. ⟨hal-03811459⟩
Surface and interface elastic waves in superlattices: Transverse localized and resonant modes
E. El Boudouti, B. Djafari-Rouhani, E. Khourdifi, Leonard Dobrzynski
Physical Review B, 1993, 48 (15), pp.10987-10997. ⟨10.1103/PhysRevB.48.10987⟩. ⟨hal-04069551⟩
Simulation of non-equilibrium transport in deep submicron MOSFETs
Bricout Paul-Henri, Emmanuel Dubois, Renaud Fauquembergue
ESSDERC '93: 23rd European solid State Device Research Conference, Sep 1993, Grenoble, France. ⟨hal-04248343⟩
Comptage de particules par ultrasons haute fréquence focalisés : application au génie biologique et médical, Particles couting using high frequency focused ultrasounds : biomedical application
Fabrice Lefebvre
Electronique. Université de Valenciennes et du Hainaut-Cambrésis, 1993. Français. ⟨NNT : 1993VALE0016⟩. ⟨tel-03445687⟩
Influence of the gate leakage current on the noise performance of MESFETs and MODFETs
Francois Danneville, Gilles Dambrine, H. Happy, A. Cappy
1993 IEEE MTT-S International Microwave Symposium Digest, Jun 1993, Atlanta, United States. pp.373-376 vol.1, ⟨10.1109/mwsym.1993.276800⟩. ⟨hal-03317746⟩