Publications

Affichage de 2451 à 2460 sur 16133


  • Article dans une revue

Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stephane Vezian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher, Yvon Cordier

We report on the fabrication of an enhancement mode p-GaN/AlN/GaN high electron mobility transistor with selective area sublimation under vacuum of the p-GaN cap layer. The GaN evaporation selectivity is demonstrated on the thin 2 nm AlN barrier layer. Furthermore, the regrowth of AlGaN is a major…

Solid-State Electronics, 2022, 188, pp.108210. ⟨10.1016/j.sse.2021.108210⟩. ⟨hal-03467546⟩

  • Article dans une revue

Monolayer molybdenum disulfide switches for 6G communication systems

Myungsoo Kim, Guillaume Ducournau, Simon Skrzypczak, Sung Jin Yang, Pascal Szriftgiser, Nicolas Wainstein, Keren Stern, Henri Happy, Eilam Yalon, Emiliano Pallecchi, Deji Akinwande

Atomically thin two-dimensional materials—including transitional metal dichalcogenides and hexagonal boron nitride—can exhibit non-volatile resistive switching. This switching behaviour could be used to create analogue switches for use in high-frequency communication, but has so far been limited to…

Nature Electronics, 2022, 5, pp.367-373. ⟨10.1038/s41928-022-00766-2⟩. ⟨hal-03689339⟩

  • Communication dans un congrès

Oscillations du ressaut hydraulique circulaire

Aurélien Goerlinger, Farzam Zoueshtiagh, Alexis Duchesne

25emes Rencontres du non-linéaire 2022, Mar 2022, Paris, France. ⟨hal-03607819⟩

  • Article dans une revue

Topological cavities in phononic plates for robust energy harvesting

Zhihui Wen, Yabin Jin, Penglin Gao, Xiaoying Zhuang, Timon Rabczuk, Bahram Djafari-Rouhani

Mechanical Systems and Signal Processing, 2022, 162, pp.108047. ⟨10.1016/j.ymssp.2021.108047⟩. ⟨hal-03542927⟩