Publications

Affichage de 2491 à 2500 sur 15760


  • Communication dans un congrès

Integrated digital RF transmitters with single-bit delta-sigma-driven FIR-DACs

Andreas Kaiser, Antoine Frappé

Radio Frequency Integrated Circuits Symposium (RFIC) 2021, WSL Sub-6GHz advanced transmitter architectures and PA linearization techniques, Jun 2021, Atlanta, United States. ⟨hal-03701025⟩

  • Communication dans un congrès

Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopy

Micka Bah, Damien Valente, Marie Lesecq, N. Defrance, Maxime Garcia Barros, Jean-Claude de Jaeger, Eric Frayssinet, Remi Comyn, Thi Huong Ngo, Daniel Alquier, Yvon Cordier

This work aims to understand the origin of propagation losses in GaN-on-Si devices at microwave frequencies thanks to original AFM's electrical modes such as scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). AlN films on Si substrate were grown using…

Wocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.131-132. ⟨hal-03284079⟩

  • Communication dans un congrès

GaN schottky diode on silicon substrate for high power THz multiplier

Giuseppe Di Gioia, M Samnouni, H Bouillaud, P Mondal, J Treuttel, Yvon Cordier, Malek Zegaoui, Guillaume Ducournau, Yannick Roelens, Mohammed Zaknoune

GaN-based planar Schottky barrier diodes with potential applications in THz frequency multipliers were fabricated on silicon substrate and characterized. GaN is a promising candidate to overcome all the physical limitations of GaAs which have been reached in the frame of high frequency power…

WOCSDICE 2021, Jun 2021, Bristol, United Kingdom. ⟨hal-03384345⟩

  • Communication dans un congrès

Fluorine-based plasma treatment for AlGaN/GaN e-mode HEMTs and low on-voltage diodes

Quentin Fornasiero, N. Defrance, Marie Lesecq, Eric Frayssinet, Yvon Cordier, Florian Chevalier, Nadir Idir, Jean-Claude de Jaeger

The onset and pinch-off voltages shift of lateral GaN field-effect rectifier diodes (L-FER) and normally-off HEMTs are studied. It is shown that a short duration of low power SF6 plasma followed by a low temperature annealing permits to get an effective and stabilized fluorine ion implantation in…

Wocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.50-52. ⟨hal-03275589⟩

  • Communication dans un congrès

AlGaN/GaN HEMTs on AlN substrate for power electronics

Jash Mehta, Idriss Abid, Thi Huong Ngo, Yvon Cordier, F Medjdoub

GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applications. On the other hand, Ultra-Wide Band Gap (UWBG) materials such as AlN that has a bandgap of 6.2 eV are attracting attention for pushing the limits of high voltage power…

44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE2021, Jun 2021, Bristol (virtual), United Kingdom. ⟨hal-03279160⟩

  • Communication dans un congrès

Subthreshold neuromorphic devices for spiking neural networks applied to embedded A.I

Christophe Loyez, Kevin Carpentier, Ilias Sourikopoulos, Francois Danneville

Energy autonomy is one of the major challenges of embedded Artificial Intelligence. Among the candidate technologies likely to take up such a challenge, spiking neural networks are the most promising because of both their spatio-temporal and sparse representation of the information. In this context…

19th IEEE International New Circuits and Systems Conference, NEWCAS 2021, Jun 2021, Toulon, France. pp.1-4, ⟨10.1109/NEWCAS50681.2021.9462779⟩. ⟨hal-03325598⟩

  • Communication dans un congrès

Vertical multilayer structures based on porous silicon layers for mid-infrared applications

Sofiane Meziani, Maxime Duris, Mohamed Guendouz, Nathalie Lorrain, Parastesh Pirasteh, Loïc Bodiou, Warda Raiah, Yannick Coffinier, V. Thomy, Joël Charrier

Journées du GDR Nano TeraMIR, Jun 2021, virtuel, France. ⟨hal-03621610⟩

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