Publications

Affichage de 3431 à 3440 sur 16378


  • Brevet

Method for manufacturing a varactor diode and a bipolar transistor

Pascal Chevalier, Alexis Gauthier, Gregory Avenier

France, Patent n° : FR3098015 (A1) 2021-01-01. 2021, N° de priorité : FR20190007149 20190628. ⟨hal-05639334⟩

  • Article dans une revue

High-Q silicon nitride drum resonators strongly coupled to gates

Xin Zhou, Srisaran Venkatachalam, Ronghua Zhou, Hao Xu, Alok Pokharel, Andrew Fefferman, Mohammed Zaknoune, Eddy Collin

Silicon nitride (SiN) mechanical resonators with high quality mechanical properties are attractive for fundamental research and applications. However, it is challenging to maintain these mechanical properties while achieving strong coupling to an electrical circuit for efficient on-chip integration…

Nano Letters, 2021, 21 (13), pp.5738-5744. ⟨10.1021/acs.nanolett.1c01477⟩. ⟨hal-03263144⟩

  • Communication dans un congrès

Bias-dependence of surface charge at low temperature in GaN self-switching diodes

E. Perez-Martin, I. Iniguez-De-La-Torre, T. Gonzalez, Christophe Gaquière, J. Mateos

In this work, with the help of a semi-classical two-dimensional Monte Carlo (MC) simulator, we study the DC current-voltage curves of Self-Switching Diodes (SSDs) fabricated on an AlGaN/GaN heterostructure from 100 K up to room temperature. Due to the very narrow channel of the SSDs, the presence…

13th Spanish Conference on Electron Devices, CDE 2021, Jun 2021, Sevilla, Spain. pp.90-93, ⟨10.1109/CDE52135.2021.9455737⟩. ⟨hal-03362256⟩