Publications

Affichage de 3451 à 3460 sur 15761


  • Communication dans un congrès

Smart way to adjust Schottky barrier height in 130 nm BiCMOS process for sub-THz applications

Vincent Gidel, Frederic Gianesello, Pascal Chevalier, Gregory Avenier, Nicolas Guitard, Michel Buczko, Cyril Luxey, Guillaume Ducournau

In this paper, an innovative Schottky diode architecture is proposed and implemented in 130 nm BiCMOS technology. A state-of-the-art 1 THz cut-off frequency is measured and an innovative way to modify the height of the Schottky barrier is proposed. This smart way could enable zero-bias high-…

IEEE Radio and Wireless Symposium (RWS), Jan 2020, San Antonio, United States. ⟨10.1109/RWS45077.2020.9050042⟩. ⟨hal-03322813⟩

  • Communication dans un congrès

Emulation of end-to-end communications systems in railway scenarios: physical layer results

Juan Moreno Garcia-Loygorri, Sofiane Kharbech, Laurent Clavier, Redha Kassi, Raul Torrego, Aitor Arriola, Inaki Val, Marion Berbineau, Jose Soler, Ying Yan

The complexity of modern communication systems is remarkable, and the efforts needed to put into service a new one arc substantial as well. In some industrial sectors, circumstances are even harder. For example, in railways, the tests to be done are costly due to the integration in the rolling…

14th European Conference on Antennas and Propagation (EuCAP), Mar 2020, Copenhagen, Denmark. Paper 9135760, 5 p., ⟨10.23919/EuCAP48036.2020.9135760⟩. ⟨hal-03270096⟩

  • Article dans une revue

Low-frequency noise parameter extraction method for single-layer graphene FETs

Nikolaos Mavredakis, Wei Wei, Emiliano Pallecchi, Dominique Vignaud, Henri Happy, Ramon Garcia Cortadella, Nathan Schaefer, Andrea Bonaccini Calia, Jose Antonio Garrido, David Jimenez

In this article, a detailed parameter extraction methodology is proposed for low-frequency noise (LFN) in single-layer (SL) graphene transistors (GFETs) based on a recently established compact LFN model. The drain current and LFN of two short channel back-gated GFETs (L = 300 and 100 nm) were…

IEEE Transactions on Electron Devices, 2020, 67 (5), pp.2093-2099. ⟨10.1109/TED.2020.2978215⟩. ⟨hal-03142225⟩

  • Proceedings/Recueil des communications

Nature of Science Experiments: Exploring Galilean Physics of Motion

Raffaele Pisano, Vincenzo Cioci

Proceedings of the 39th Annual Conference ; Pisa, 9-12 September 2019 ; Società Italiana degli Storici della Fisica e dell'Astronomia (SISFA), Pisa University Press, pp.117-123, 2020, 978883339402. ⟨10.12871/978883339402219⟩. ⟨hal-04512879⟩

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