Publications

Affichage de 4301 à 4310 sur 15761


  • Communication dans un congrès

[Invited] Reading Tartaglia’s and Beeckman Geometrical and Mathematical Modelling Applied to Natural Phenomena

Raffaele Pisano, Antonella Mastrorilli

International Colloquium Beekman in Context, 27-28 September, University of Middleburg, Sep 2018, Middleburg, Netherlands. ⟨hal-04519013⟩

  • Article dans une revue

Electrochemical Aptamer-Based Biosensors for the Detection of Cardiac Biomarkers

Iwona Grabowska, Neha Sharma, Alina Vasilescu, Madalina Iancu, Gabriela Badea, Rabah Boukherroub, Satishchandra Ogale, Sabine Szunerits

ACS Omega, 2018, 3 (9), pp.12010-12018. ⟨10.1021/acsomega.8b01558⟩. ⟨hal-02375134⟩

  • Communication dans un congrès

[Invited] Transdermal drug delivery: Beyond the state of the art

Rabah Boukherroub

International Conference On Nanomedicine And Nanobiotechnology, ICONAN 2018, Sep 2018, Rome, Italy. ⟨hal-04618991⟩

  • Communication dans un congrès

Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications

Riad Kabouche, Joff Derluyn, Roland Püsche, Stefan Degroote, Marianne Germain, Romain Pécheux, Etienne Okada, Malek Zegaoui, F Medjdoub

We report on a comparison of the ultrathin (sub-10 nm barrier thickness) AlN/GaN heterostructure using two types of buffer layers for millimeter-wave applications: 1) carbon doped GaN high electron mobility transistors (HEMTs) and 2) double heterostructure field effect transistor (DHFET). It is…

13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.5-8, ⟨10.23919/EuMIC.2018.8539962⟩. ⟨hal-02356753⟩

  • Communication dans un congrès

A Source and Drain Transient Currents Technique for Trap Characterisation in AIGaN/GaN HEMTs

Steven Duffy, Brahim Benbakhti, Wei Zhang, Karol Kalna, Khaled Ahmeda, Mohammed Boucherta, Nour Eddine Bourzgui, Maher, Hassan, Ali Soltani

The source/drain and gate induced charge trapping within an AlGaN/GaN high electron mobility transistor is studied, under normal device operation, by excluding self-heating effects, for the first time. Through direct measurement of current transients of both source and drain terminals, a…

2018 13th European Microwave Integrated Circuits Conference (EuMIC), Sep 2018, Madrid, Spain. pp.214-217, ⟨10.23919/EuMIC.2018.8539935⟩. ⟨hal-02310028⟩

  • Communication dans un congrès

Large-area femtosecond laser ablation of Silicon to create membrane with high performance CMOS-SOI RF functions

Arun Bhaskar, Justine Philippe, Matthieu Berthomé, Etienne Okada, J.F. Robillard, Daniel Gloria, Christophe Gaquière, Emmanuel Dubois

Femtosecond laser processing is a tool of increasing relevance for controlled etching of metals, semiconductors, and dielectrics with minimum collateral damage. We make use of this technique to remove silicon locally from the handler substrate of Silicon-on-Insulator (SOI) dies. By combining laser…

2018 7th Electronic System-Integration Technology Conference (ESTC), Sep 2018, Dresden, Germany. pp.801-806, ⟨10.1109/ESTC.2018.8546407⟩. ⟨hal-02317259⟩

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