Publications

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  • Article dans une revue

Impact of trap states on inductive phenomena in 30% InGaN/GaN MQW LED devices

Kutsal Bozkurt, Orhan Özdemir, Neslihan Ayarci Kuruoğlu, Bandar Alshehri, Karim Dogheche, Quentin Gaimard, Abderrahim Ramdane, El Hadj Dogheche

Investigation of structural quality (by x-ray diffraction) and analysis of defects and interfaces in epitaxial layers (by transmission electron microscopy (TEM)) have been performed on InGaN/GaN multiple quantum wells (MQWs) LED structure. Using energy dispersive x-ray analysis attached to the TEM…

Journal of Physics D: Applied Physics, 2019, 52 (10), pp.105102. ⟨10.1088/1361-6463/aaf941⟩. ⟨hal-03143598⟩