Publications

• Communication dans un congrès

Theoretical and Experimental Study at 60 and 94 GHz in Indoor Environments

M.T. Martinez-Ingles, D.P. Gaillot, J. Pascual-Garcia, J.M. Molina-Garcia-Pardo, J.V. Rodriguez, L. Juan-Llacer, M. Ferrando

XXXIII Simposium Nacional de la Unien Cienteca Internacional de Radio, URSI 2018, Sep 2018, Granada, Spain. 4 p. ⟨hal-04543290⟩

• Article dans une revue

Frequency locking and controllable chaos through exceptional points in optomechanics

P. Djorwe, Yan Pennec, Bahram Djafari-Rouhani

We engineer mechanical gain (loss) in a system formed by two optomechanical cavities (OMCs), that are mechanically coupled. The gain (loss) is controlled by driving the resonator with laser that is blue (red) detuned. We predict analytically the existence of multiple exceptional points (EPs), a…

Physical Review E , 2018, 98 (3), ⟨10.1103/PhysRevE.98.032201⟩. ⟨hal-03183509⟩

• Communication dans un congrès

[Invited] Transmission Energy Analysis And Modeling Of A Video Sensor Node In The Context Of Next Generation WVSN

Achraf Ait-Beni-Ifit, Othmane Alaoui-Fdili, Patrick Corlay, François-Xavier Coudoux, Mohammed El Hassouni

Energy consumption is of main concern in the field of Next generation Wireless Video Sensor Networks (WVSN) where energy resources are limited, consisting only in the battery of sensor nodes that determines the node's lifetime. In the current work, Intra-Only H.265/HEVC is considered as video…

2018 IEEE Conference on Antenna Measurements & Applications (CAMA), Sep 2018, Västerås, Sweden. pp.1-4, ⟨10.1109/CAMA.2018.8530585⟩. ⟨hal-03578381⟩

• Communication dans un congrès

Temperature monitoring of short-gate length AlGaN/GaN HEMT via an integrated sensor

Flavien Cozette, Marie Lesecq, N. Defrance, Michel Rousseau, Jean-Claude de Jaeger, Adrien Cutivet, Hassan Maher, Maher, Hassan

This paper describes a new method to measure AlGaN/GaN High Electron Mobility Transistors (HEMTs) operating temperature in devices dedicated to RF application. A resistive nickel temperature sensor is integrated into HEMT active area. The technological process development permits to integrate the…

48th European Solid-State Device Research Conference (ESSDERC 2018), Sep 2018, Dresden, Germany. pp.134-137, ⟨10.1109/ESSDERC.2018.8486912⟩. ⟨hal-03695010⟩

• Communication dans un congrès

Joint Localization and Clock Off- set Estimation via Time-Of-Arrival with Ranging Offset

Ido Nevat, François Septier, Karin Avnit, Gareth Peters, Laurent Clavier

26th European Signal Processing Conference (EUSIPCO), Sep 2018, Roma, Italy. pp.672-676. ⟨hal-02368447⟩

• Communication dans un congrès

Electrical characterization of in-plane InGaAs nanostructures grown by selective molecular beam epitaxy

Alexandre Bucamp, X. Wallart, Dominique Vignaud, Christophe Coinon, David Troadec, L. Desplanque

20th International Conference on Molecular Beam Epitaxy (ICMBE), Sep 2018, Shanghai, China. ⟨hal-04440002⟩

• Communication dans un congrès

Selective Area Molecular Beam Epitaxy of in-plane InSb nanowires on mismatched substrates

L. Desplanque, Alexandre Bucamp, David Troadec, Gilles Patriarche, X. Wallart

20th International Conference on Molecular Beam Epitaxy (ICMBE), Sep 2018, Shanghai, China. ⟨hal-04439982⟩

• Article dans une revue

Facile preparation of high density polyethylene superhydrophobic/superoleophilic coatings on glass, copper and polyurethane sponge for self-cleaning, corrosion resistance and efficient oil/water separation

Yuanyuan Cheng, Bei Wu, Xiaofan Ma, Shixiang Lu, Wenguo Xu, Sabine Szunerits, Rabah Boukherroub

Journal of Colloid and Interface Science, 2018, 525, pp.76-85. ⟨10.1016/j.jcis.2018.04.075⟩. ⟨hal-02375138⟩

• Article dans une revue

GaN nanodiode arrays with improved design for zero-bias sub-THz detection

H Sánchez-Martin, S. Sánchez-Martin, Ignacio Íñiguez-De-La-Torre, S Pérez, J A Novoa, Guillaume Ducournau, B Grimbert, Christophe Gaquière, T González, J Mateos

GaN based self-switching diodes (SSDs) have been fabricated for the first time on SiC substrate. They have been characterized as RF power detectors in a wide frequency range up to 220 GHz, showing a cutoff frequency of about 200 GHz. At low-frequency, RF measurements exhibit a square law detection…

Semiconductor Science and Technology, 2018, 33 (9), pp.095016. ⟨10.1088/1361-6641/aad766⟩. ⟨hal-03185613⟩

• Article dans une revue

Electrical Evidence of the Tunable Electrical Bragg Bandgaps in Piezoelectric Plates

Clément Vasseur, Charles Croënne, Jerome O. Vasseur, Bertrand Dubus, Mai Pham Thi, Claude Prevot, Anne-Christine Hladky

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2018, 65 (9), pp.1552-1562. ⟨10.1109/TUFFC.2018.2847246⟩. ⟨hal-02316833⟩