Publications

Affichage de 4821 à 4830 sur 16134


  • Communication dans un congrès

Modeling of Rosen-type piezoelectric transformer by mean of a polynomial approach

Derandraibe Jeannot Falimiaramanana, Faniry Emilson Ratolojanahary, Ismail Naciri, P.M. Rabotovao, Lahoucine Elmaimouni, Jean-Etienne Lefebvre, Mohamed Rguiti, Tadeusz Gryba

The electromechanical behavior of piezoelectric transformers (PTs) is predicted using a polynomial approach. It is the first time that a polynomial method is applied to study structures made up of both an actuator and a transducer. The method consists in incorporating directly into the equations of…

6th International Conference on Multimedia Computing and Systems (ICMCS 2018), May 2018, Rabat, Morocco. pp.143-148, ⟨10.1109/ICMCS.2018.8525914⟩. ⟨hal-03582336⟩

  • Communication dans un congrès

Contribution for Green Road Freight Transportation: Truck Platoon Application Based on Fuzzy Logic

S Moh Ahmed, Yassin El Hillali, Atika Rivenq

A simple, Truck platoon is the process of coupling two or more trucks together while they are travelling on a highway. Truck platoon increases the productivity of road transportation sector and truck industries, reduction of green road freight operational costs as a result of fuel saving, and…

International Conference on Green Energy & Environmental Engineering (GEEE-2018) Proceedings of Engineering and Technology – PET Vol.37 pp.82-85, May 2018, Tunis, Tunisia. ⟨hal-03381787⟩

  • Communication dans un congrès

LoRa-like CSS-based PHY Layer Capture Effect and Serial Interference Cancellation

Umber Noreen, Laurent Clavier, Ahcène Bounceur

24th European Wireless (EW’2018), May 2018, Catania, Italy. ⟨hal-01829252⟩

  • Article dans une revue

Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

T.A. Karatsori, M. Pastorek, C.G. Theodorou, A. Fadjie, Nicolas Wichmann, L. Desplanque, X. Wallart, S. Bollaert, A. Dimitriadis, G. Ghibaudo

A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques, such as the well-known Y-function method established for Si MOSFETs, are applied in order to extract the electrical parameters and study the behavior of these…

Solid-State Electronics, 2018, 143, pp.56-61. ⟨10.1016/j.sse.2017.12.001⟩. ⟨hal-01948029⟩

  • Article dans une revue

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Yvon Cordier, Rémi Comyn, Éric Frayssinet, Mario Khoury, Marie Lesecq, Nicolas Defrance, Jean-Claude de Jaeger

Despite a lower growth temperature is generally considered as a drawback for achieving high crystal quality, the necessity to reduce the nucleation temperature of AlN on Silicon has permitted Molecular Beam Epitaxy (MBE) to demonstrate high performance for GaN transistors operating at high…

Physica Status Solidi A (applications and materials science), 2018, 215 (9), pp.1700637. ⟨10.1002/pssa.201700637⟩. ⟨hal-03576045⟩