Publications

• Communication dans un congrès

The next Millimeter-Wave breakthrough coming up with advanced AlN/GaN transistors

L. Ben-Hammou, Francois Grandpierron, Kathia Harrouche, F Medjdoub

<div><p>GaN-based material enables higher power density, superior breakdown voltage, and higher thermal conductivity as compared to its counterparts. On the other hand, the poweradded-efficiency (PAE) becomes a key parameter in order to support complex waveforms with high peak-to-…

GaN Marathon, Jun 2024, Verone, Italy. ⟨hal-04762018⟩

• Article dans une revue

Plasmon-driven creation of magnetic topological structures

W. Al Saidi, R. Sbiaa, Y. Dusch, N. Tiercelin

We demonstrate the creation and control of magnetic topological textures in thin film structures by plasmonic effects. From electromagnetic and photothermal models, the heat and absorption were determined, then the results were implemented in micromagnetic formalism to study the dynamics of…

Applied Physics Letters, 2024, 124 (24), ⟨10.1063/5.0208694⟩. ⟨hal-04665796⟩

• Thèse

Métasurfaces désordonnées pour l'absorption aux longueurs d'onde infrarouges, Disordered metasurfaces for absorption at infrared wavelengths

Roman Buisine

L'emploi de désordre dans la position des méta-atomes permet d'améliorer les propriétés de rayonnement électromagnétique des métasurfaces par rapport aux configurations périodiques. D'autre part, les techniques émergentes d'auto-assemblage peuvent être mises à profit pour…, The use of disorder in the position of meta-atoms allows for the improvement of the electromagnetic radiation properties of metasurfaces compared to periodic configurations. On the other hand, emerging self-assembly techniques can be leveraged to reduce the time and cost of their fabrication. This…

Optique / photonique. Université de Lille, 2024. Français. ⟨NNT : 2024ULILN011⟩. ⟨tel-04666500⟩

• Communication dans un congrès

Field confinement and its analysis in the THz range

Théo Hannotte, Ali Reda, Romain Peretti

Confining the electromagnetic field in sub wavelength volume is a widespread challenge in any range of photonics. One of the specificities of the THz range is the relatively low losses of metal allowing the use of metallic structure to achieve this confinement. In this conference, we will show: -…

The 11th International Symposium on Terahertz-Related Devices and Technologies, Jun 2024, Buffalo, United States. ⟨hal-04610036v2⟩

• Communication dans un congrès

Event-Driven Neural Network for Ultra-Low-Power On-Chip Keyword Spotting

Marc Chevalier, Benoit Larras, Antoine Frappé

Colloque National du GDR SoC², Jun 2024, Toulouse, France. ⟨hal-05053939⟩

• Communication dans un congrès

Low-Energy Floating-Point Flash Attention Mechanisms for 18nm FD-SOI CMOS

Joaquin Antonio Cornejo, Filipe Pouget, Sylvain Clerc, Tifenn Hirtzlin, Benoit Larras, Andreia Cathelin, Antoine Frappé

Colloque National du GDR SoC², Jun 2024, Toulouse, France. ⟨hal-05053945⟩

• Poster de conférence

Carrier density analysis in stressed n-doped GaN on sapphire layers

Ndembi Ignoumba-Ignoumba, Camille Sonneville, Éric Frayssinet, Adrien Bidaud, Florian Bartoli, Yvon Cordier, F Medjdoub, Dominique Planson, Cyril Buttay

GaN Marathon 2024, Jun 2024, Verona, Italy. 2024. ⟨hal-05054677⟩

• Communication dans un congrès

Carrier density analysis in stressed n-doped GaN layers on sapphire

Ndembi Ignoumba-Ignoumba, Camille Sonneville, Éric Frayssinet, Adrien Bidaud, Florian Bartoli, Yvon Cordier, F Medjdoub, Dominique Planson, Cyril Buttay

Using micro-Raman spectroscopy on MOCVD slightly n-doped GaN on sapphire structures (1.5 x 10$^{15}$ cm$^{-3}$ – 6.5 x 10$^{15}$ cm$^{-3}$), we report a method to dissociate biaxial stress contribution from n carrier concentration contribution in A1(LO) Raman peak position. For all characterized…

GaN Marathon, Jun 2024, Vérone, Italy. ⟨hal-04639487⟩

• Communication dans un congrès

High quality fully versus pseudo vertical GaN-on-Silicon pn diodes

Youssef Hamdaoui, Idriss Abid, Sondre Michler, Katir Ziouche, F Medjdoub

We report on high quality vertical GaN-on-silicon pn diodes. A successful scaling of the drift region thicknesses resulted in state-of-the-art breakdown voltage well above 1000 V (corresponding to a critical electric field of 2.3 MV/cm) together with low Ron (&lt; 0.5 mΩ.cm²). Furthermore, a…

GaN Marathon, Jun 2024, VERONA, Italy. ⟨hal-04762008⟩

• Autre publication scientifique

Fortran : retour vers le futur !

Vincent Magnin

Après avoir établi un diagnostic sans concession des faiblesses de l'environnement de développement Fortran, la communauté Fortran-lang, créée fin 2019, s'y attaque méthodiquement. Le langage dispose désormais d'un site web central regroupant les informations indispensables aussi…

2024. ⟨hal-04604968⟩