Publications

Affichage de 541 à 550 sur 16133


  • Communication dans un congrès

Effect of High Temperature RF Stress on the Trapping Behavior of Carbon Doped AlN/GaN/AlGaN HEMTs

Lyes Ben-Hammou, François Grandpierron, Elodie Carneiro, Katir Harrouche, Etienne Okada, Gilles Patriarche, Farid Medjdoub

This study investigates the impact of short-term hightemperature operating life (HTOL) reliability testing on the trapping behavior and power performance of carbon-doped AlN/GaN/AlGaN High Electron Mobility Transistors (HEMTs). HTOL stress can lead to significant degradation in key performance…

2025 IEEE International Reliability Physics Symposium (IRPS 2025), Mar 2025, Monterey, CA, United States. ⟨10.1109/irps48204.2025.10983377⟩. ⟨hal-05344709⟩

  • Brevet

Device and method for continuous-time energy calculation of an analog signal

Antoine Frappe, Benoit Larras, Andreia Cathelin, Soufiane Mourrane

United States, Patent n° : US2024429934 (A1) 2024-12-26. 2024, Numéro(s) de priorité: EP20230305983 20230621 - Numéro de demande: US202418748787 20240620. ⟨hal-05156540⟩

  • Brevet

Device and method for continuous-time energy calculation of an analog signal

Antoine Frappe, Benoit Larras, Andreia Cathelin, Soufiane Mourrane

Unknown Region, Patent n° : EP4482036 (A1) 2024-12-25. 2024, Numéro(s) de priorité: EP20230305983 20230621 - Numéro de demande: EP20230305983 20230621. ⟨hal-05156511⟩

  • Article dans une revue

Exploring the impact of thermal fluctuations on continuous models of adhesion

Claudia Binetti, Andrea Cannizzo, Giuseppe Florio, Nicola M Pugno, Giuseppe Puglisi, Stefano Giordano

International Journal of Engineering Science, 2024, 208, ⟨10.1016/j.ijengsci.2024.104194⟩. ⟨hal-04862968⟩

  • Article dans une revue

Enhancing Thermoelectric Efficiency in CrSi 2 Films through Al Ion Implantation-Induced Energy Filtering

Mariana M. Timm, Hugo Bouteiller, Barbara Konrad, Erwan Oliviero, Jean-François Barbot, David Troadec, Paulo F. P. Fichtner, Nicole Fréty

This article reports the effects of Al ion implantation and thermal history on the microstructure and thermoelectric properties of amorphous CrSi<sub>2</sub> thin films. Approximately 270&nbsp;nm thick CrSi<sub>2</sub> films were produced by magnetron sputtering and…

ACS Applied Electronic Materials, 2024, 7 (1), pp.246-252. ⟨10.1021/acsaelm.4c01660⟩. ⟨hal-05086873⟩