Publications

Affichage de 541 à 550 sur 15761


  • Communication dans un congrès

Exploring Nanorobotics Integration with Microwave and Millimeter-Wave Techniques for Advanced On-wafer Measurement

Cérine Mokthari, Clément Lenoir, Mohamed Sebbache, Christophe Boyaval, Maxime Berthe, Gilles Dambrine, Kamel Haddadi

2024 5th International Conference in Electronic Engineering, Information Technology & Education (EEITE), May 2024, Chania, Greece. pp.1-6, ⟨10.1109/EEITE61750.2024.10654413⟩. ⟨hal-04714622⟩

  • Poster de conférence

Single cell analysis for intrinsic stemness potential of cancer

Bernadette Neve, Aude Sivery, Isabelle Van Seuningen, Anthony Treizebré, Audrey Vincent

5th Sunrise meeting, May 2024, Ajaccio, France. . ⟨hal-04589665⟩

  • Poster de conférence

Single cell analysis for intrinsic stemness potential of cancer cells

Bernadette Neve, Aude Sivery, Isabelle Van Seuningen, A. Treizebre, Audrey Vincent

5th SUNRiSE meeting (Heterogeneity and Plasticity in cancer), May 2024, Ajaccio - Corse, France. ⟨hal-04547376⟩

  • Communication dans un congrès

Investigation of the origin of deep levels in Carbon-doped AlN/GaN/AlGaN HEMTs

L. Ben Hammou, Francois Grandpierron, Elodie Carneiro, Katir Ziouche, Etienne Okada, F Medjdoub

<div><p>In this work, we focused on understanding the origin and impact of deep levels in various AlN/GaN HEMTs with carbon doped GaN buffer including or not an AlGaN back barrier. It is shown that the inclusion of a back barrier reduces drastically the current collapse. Furthermore, we…

7th Workshop on Compound Semiconductor Devices and Integrated Circuits, May 2024, Heraklion, Greece. ⟨hal-04762106⟩

  • Communication dans un congrès

Impact of Carbon-doped AlGaN back barrier in AlN/GaN/AlGaN HEMTs

François Grandpierron, Elodie Carneiro, L. Ben Hammou, Etienne Okada, J. Strate, M. Germain, F Medjdoub

<div><p>The impact of carbon doping into the AlGaN back barrier in AlN/GaN HEMTs is investigated. In this work, we demonstrate that a back polarization itself is not enough to ensure a proper electron confinement under high field, especially when using sub-150 nm. Experimental results…

47th Workshop on Compound Semiconductor Devices and Integrated Circuits, May 2024, Heraklion, Greece. ⟨hal-04762100⟩

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