Publications

Affichage de 5811 à 5820 sur 16141


  • Article dans une revue

First power performance demonstration of flexible AlGaN/GaN high electron mobility transistor

Sarra Mhedhbi, Marie Lesecq, Philippe Altuntas, N. Defrance, Etienne Okada, Yvon Cordier, Benjamin Damilano, Gema Tabares Jimenez, Abel Ebongue, Virginie Hoel

This letter reports on the first demonstration of microwave power performance at 10 GHz on flexible AlGaN/GaN high-electron-mobility transistor (HEMT). A maximum dc current density of 620 mA/mm at V-GS = 0 V and a peak extrinsic transconductance of 293 mS/mm are obtained for a 2 x 50 x 0.1 mu m(2)…

IEEE Electron Device Letters, 2016, 37 (5), pp.553-555. ⟨10.1109/LED.2016.2542921⟩. ⟨hal-03270110⟩

  • Article dans une revue

Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

Bandar Alshehri, Karim Dogheche, Sofiane Belahsene, Bilal Janjua, Abderrahim Ramdane, Gilles Patriarche, Tien Khee Ng, Boon Seng Ooi, Didier Decoster, El Hadj Dogheche

In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL…

MRS Advances, 2016, 1 (23), pp.1735-1742. ⟨10.1557/adv.2016.417⟩. ⟨hal-03780652⟩

  • Article dans une revue

Microwave and millimeter wave properties of vertically-aligned single wall carbon nanotubes films

Kamel Haddadi, C. Tripon-Canseliet, Q. Hivin, Guillaume Ducournau, E. Teo, P. Coquet, B. K. Tay, Sylvie Lepilliet, Vanessa Avramovic, J. Chazelas, Didier Decoster

We present the experimental determination of the complex permittivity of vertically aligned single wall carbon nanotubes (SWCNTs) films grown on quartz substrates in the microwave regime from 10 MHz up to 67 GHz, with the electrical field perpendicular to the main axis of the carbon nanotubes (CNTs…

Journal of Electronic Materials, 2016, 45 (5), pp.2433-2441. ⟨10.1007/s11664-016-4362-3⟩. ⟨hal-03224656⟩

  • Article dans une revue

Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements

N. K. Subramani, A. K. Sahoo, Jean-Christophe Nallatamby, R. Sommet, N. Rolland, F Medjdoub, R. Quere

no abstract

IEEE Transactions on Microwave Theory and Techniques, 2016, 64 (5), pp.1351-1358. ⟨10.1109/TMTT.2016.2549528⟩. ⟨hal-01394908⟩

  • N°spécial de revue/special issue

Guest Editorial Introduction to the Special Issue on Terahertz Near-Field Microscopy and Applications

Haewook Han, Giles Davies, Tahsin Akalin, Koichiro Tanaka

IEEE Transactions on Terahertz Science and Technology, 6, pp.353-355, 2016, ⟨10.1109/TTHZ.2016.2549861⟩. ⟨hal-03680777⟩

  • Article dans une revue

Propagation of acoustic wave’s motion in orthotropic Cylinders of infinite length

Ismail Naciri, Lahoucine Elmaimouni, Jean-Etienne Lefebvre, Faniry Emilson Ratolojanahary, Tadeusz Gryba

We report, in the present work, a numerical method for investigating guided waves propagation in a homogeneous infinite cylinder composed of elastic material. This method makes use of Legendre polynomials series and harmonic function to express different displacement components which are introduced…

Maghrebian Journal of Pure and Applied Science , 2016, 2 (1), pp.32-38. ⟨10.48383/IMIST.PRSM/mjpas-v2i1.4214⟩. ⟨hal-04080863⟩

  • Article dans une revue

Influence of Doping and Tunneling Interface Stoichiometry on n+In 0.5 Ga 0.5 As/p+GaAs 0.5 Sb 0.5 Esaki Diode Behavior

Salim El Kazzi, A Alireza, Caio Cesar Mendes Bordallo, Quentin Smets, Ludovic Desplanque, Xavier Wallart, Olivier Richard, Bastien Douhard, Anne Verhulst, Nadine Collaert, Clement Merckling, Marc Heyns, Aaron Thean

In this work, we study the influence of molecular beam epitaxy (MBE) growth parameters on the behavior of a staggered band gap n+In 0.5 Ga 0.5 As/p+GaAs 0.5 Sb 0.5 Esaki diodes. We first first show that a careful doping is required to avoid any crystal defects. Then the influence of the doping…

ECS Transactions, 2016, 72 (3), pp.73-80. ⟨10.1149/07203.0073ecst⟩. ⟨hal-05479977⟩