Publications

Affichage de 5821 à 5830 sur 15872


  • Article dans une revue

Charge Blinking Statistics of Semiconductor Nanocrystals Revealed by Carbon Nanotube Single Charge Sensors

Ewa Zbydniewska, Anna Duzynska, Michka Popoff, D. Hourlier, Stéphane Lenfant, Jaroslaw Judek, Mariusz Zdrojek, Thierry Melin

Nano Letters, 2015, 15 (10), pp.6349-6356. ⟨10.1021/acs.nanolett.5b01338⟩. ⟨hal-02396331⟩

  • Article dans une revue

Electronic band structure of zinc blende CdSe and rock salt PbSe semiconductors with silicene-type honeycomb geometry

Christophe Delerue, D. Vanmaekelbergh

2D Materials, 2015, 2 (3), pp.034008. ⟨10.1088/2053-1583/2/3/034008⟩. ⟨hal-02906823⟩

  • Article dans une revue

Atomic characterization of Au clusters in vapor-liquid-solid grown silicon nanowires

Wanghua Chen, Philippe Pareige, Celia Castro, Tao Xu, B. Grandidier, Didier Stiévenard, Pere Roca I Cabarrocas

Journal of Applied Physics, 2015, 118 (10), pp.104301. ⟨10.1063/1.4930143⟩. ⟨hal-01230692⟩

  • Article dans une revue

AlGaN/GaN HEMT's photoresponse to high intensity THz radiation

Nina Diakonova, Dmytro But, Dominique Coquillat, Wojciech Knap, C. Drexler, P. Olbrich, J. Karch, M. Schafberger, S. D. Ganichev, Guillaume Ducournau, Christophe Gaquière, M. -A. Poisson, S. Delage, G. Cywinski, C. Skierbiszewski

We report on the photoresponse dependence on the terahertz radiation intensity in ALGaN/GaN HEMTs. We show that the ALGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm2. The dynamic range in the pulsed regime of detection can be more…

Opto-Electronics Review, 2015, 23 (3), pp.195-199. ⟨10.1515/oere-2015-0026⟩. ⟨hal-01190762⟩

  • Article dans une revue

Type I band alignment in GaAs 81 Sb 19 /GaAs core-shell nanowires

Tao Xu, Mengjie Wei, Pierre Capiod, Adrian Díaz Álvarez, Xiang-Lei Han, David Troadec, Jean-Philippe Nys, Maxime Berthe, Isabelle Lefebvre, Gilles Patriarche, S.R. Plissard, Philippe Caroff, Philipp Ebert, B. Grandidier

The composition and band gap of the shell that formed during the growth of axial GaAs/GaAs81Sb19/ GaAs heterostructure nanowires have been investigated by transmission electron microscopy combined with energy dispersion spectroscopy, scanning tunneling spectroscopy, and density functional theory…

Applied Physics Letters, 2015, 107 (11), pp.112102. ⟨10.1063/1.4930991⟩. ⟨hal-01713079⟩

  • Article dans une revue

Graphene FETs With Aluminum Bottom-Gate Electrodes and Its Natural Oxide as Dielectrics

Wei Wei, Xin Zhou, Geetanjali Deokar, Haechon Kim, Mohamed Moez Belhaj, Elisabeth Galopin, Emiliano Pallecchi, Dominique Vignaud, Henri Happy

IEEE Transactions on Electron Devices, 2015, 62 (9), pp.2769-2773. ⟨10.1109/TED.2015.2459657⟩. ⟨hal-02304371⟩

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