Publications

Affichage de 6011 à 6020 sur 16142


  • Article dans une revue

Porous Gold Films Fabricated by Wet-Chemistry Processes

Aymeric Pastre, Odile Cristini, Alexandre Boé, Katarzyna Raulin, Bertrand Grimbert, Fernand Chassagneux, Nathalie Rolland, Remy Bernard

Porous gold films presented in this paper are formed by combining gold electroless deposition and polystyrene beads templating methods. This original approach allows the formation of conductive films (2 × 106 (Ω·cm)−1) with tailored and interconnected porosity. The porous gold film was deposited up…

Journal of Nanomaterials, 2016, 2016, pp.3536153. ⟨10.1155/2016/3536153⟩. ⟨hal-02898170⟩

  • Communication dans un congrès

Sub-THz zero-bias detector with high performances based on heterostructure low barrier diode (HLBD)

S. Nadar, Mohammed Zaknoune, X. Wallart, Christophe Coinon, Emilien Peytavit, Guillaume Ducournau, F. Gamand, M. Thirault, M. Werquin, S. Jonniau, N. Thouvenin, Christophe Gaquière, N. Vellas, Jean-Francois Lampin

Heterostructure low barrier diode (HLBD) based on AlGaInAs has been designed, fabricated and characterized for zero-bias millimetre-wave detection. Detectors with different heterostructures and various active areas have been tested in order to optimize their characteristics for low-level…

41st International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2016, Copenhagen, Denmark. ⟨10.1109/IRMMW-THz.2016.7758432⟩. ⟨hal-03286180⟩

  • Communication dans un congrès

Millimeter-wave six-port IQ demodulator in 65 nm SOI CMOS technology

Kamel Haddadi, Christophe Loyez

This work describes a 65 nm SOI CMOS passive mixer architecture consisting of a n-MOS cold-FET and coplanar waveguide (CPW) transmission line matching networks for six-port IQ demodulation of millimeter-wave signals. The circuit architecture avoids the use of coupler in front of the detection…

30th International Instrumentation and Meausurement Technology Conference, IEEE I2MTC 2016, May 2016, Taipei, Taiwan. pp.375-379, ⟨10.1109/I2MTC.2016.7520391⟩. ⟨hal-03224659⟩

  • Communication dans un congrès

Normally-Off AlGaN/GaN MOS-HEMTs Using Ultra-Thin Al0.45GaN0.55N Barrier and PECVDSiOx as Gate Insulator

Ahmed Chakroun, Abdelatif Jaouad, Meriem Bouchilaoun, Osvaldo Arenas, Ali Soltani, Hassan Maher

International Workshop on Nitride Semiconductors (IWM2016), Oct 2016, Orlando, United States. ⟨hal-02310128⟩

  • Article dans une revue

Energy efficiency analysis of a TR-UWB system

Adil Elabboubi, Fouzia Elbahhar, Marc Heddebaut, Raja Elassali, Yassin El Hillali

Journal of Computer Science, 2016, 12 (1), pp.19-30. ⟨hal-03682406⟩

  • Communication dans un congrès

Bi0.5Na0.5TiO3 by sol-gel method : synthesis and characterization

Sara Abou Dargham, Freddy Ponchel, Youssef Zaatar, Jamal Assaad, Denis Remiens, Doumit Zaouk

1st International Symposium on Physics of Data Storage, ISPDS-1, Dec 2015, Amiens, France. ⟨hal-04086359⟩