Publications

• Communication dans un congrès

Contact resistance study of “edge-contacted” metal-graphene interfaces

V. Passi, A. Gahoi, J. Ruhkopf, S. Kataria, Francois Vaurette, E. Pallecchi, H. Happy, M. C. Lemme

The contact resistance RC of "edge-contacted" metal-graphene interfaces is systematically studied. Our experiments demonstrate a reduction of contact resistance by intentional patterning of graphene to create "edge contacts". The parameter space for different hole patterns in…

46th European Solid-State Device Conference, ESSDERC 2016, Sep 2016, Lausanne, Switzerland. pp.236-239, ⟨10.1109/ESSDERC.2016.7599629⟩. ⟨hal-03335829⟩

• Communication dans un congrès

A Digital Delay Line with Coarse/Fine tuning through Gate/Body biasing in 28nm FDSOI

Ilias Sourikopoulos, Antoine Frappé, Andreia Cathelin, Laurent Clavier, Andreas Kaiser

This paper discusses the design and characterization of a programmable digital delay line. The core of the proposed architecture is a thyristor-type delay element featuring the capability for coarse/fine tuning without using any additional hardware. This is made possible by taking advantage of body…

46th European Solid-State Device Research Conference (ESSDERC) / 42nd European Solid-State Circuits Conference (ESSCIRC), Sep 2016, Lausanne, Switzerland. pp.145-148, ⟨10.1109/ESSCIRC.2016.7598263⟩. ⟨hal-03270099⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 5/5]

Raffaele Pisano

2016. ⟨hal-04511017⟩

• Article dans une revue

Improved Performance of YIG (Y₃Fe₅O₁₂) Films Grown on Pt-Buffered Si Substrates by Chemical Solution Deposition Technique

Xin Guo, Ying Chen, Genshui Wang, Jun Ge, Yuanyuan Zhang, Xiaodong Tang, Freddy Ponchel, Denis Remiens, Xianlin Dong

High-quality Yttrium iron garnet (YIG) films with crack-free surface and improved magnetic performance were grown on platinum (Pt)-buffered Si substrates by chemical solution deposition technique. The saturation magnetization of obtained YIG films can reach 124 emu/cm3, which was the 88%…

• Article dans une revue

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

Hadhemi Lakhdar, Nathalie Labat, Arnaud Curutchet, N. Defrance, Marie Lesecq, J.C. Dejaeger, Nathalie Malbert

Microelectronics Reliability, 2016. ⟨hal-01718762⟩

• Article dans une revue

METASTABILITY OF FINITE STATE MARKOV CHAINS: A RECURSIVE PROCEDURE TO IDENTIFY SLOW VARIABLES FOR MODEL REDUCTION

Claudio Landim, T. Xu

Consider a sequence (η N (t) : t ≥ 0) of continuous-time, irreducible Markov chains evolving on a fixed finite set E. Denote by R N (η, ξ) the jump rates of the Markov chain η N t , and assume that for any pair of bonds (η, ξ),

ALEA : Latin American Journal of Probability and Mathematical Statistics, 2016. ⟨hal-01728594⟩

• Communication dans un congrès

Coherent & tunable THz source

R. Paquet, S. Blin, M. Myara, L. Le Gratiet, M. Sellahi, B. Chomet, P. Latzel, Guillaume Ducournau, Jean-Francois Lampin, G. Beaudoin, I. Sagnes, A. Garnache

Meeting GDR NanoTeramir, 2016, Paris, France. ⟨hal-01919731⟩

• Article dans une revue

Magnetic-Phase Dependence of the Spin Carrier Mean Free Path in Graphene Nanoribbons

Jing Li, Yann-Michel Niquet, Christophe Delerue

We show theoretically that the intrinsic (phonon-limited) carrier mobility in graphene nanoribbons is considerably influenced by the presence of spin-polarized edge states. When the coupling between opposite edges switches from antiferromagnetic to ferromagnetic with increasing carrier density, the…

Physical Review Letters, 2016, 116 (23), pp.236602. ⟨10.1103/PhysRevLett.116.236602⟩. ⟨cea-01849844⟩

• Article dans une revue

Electronic structure investigation of Al0.7Ga0.3As/GaAs nanometric heterostructures by Kelvin force microscopy

Sylvain Pouch, Francois Triozon, Nicolas Chevalier, Thierry Melin, Yann Michel Niquet, Lukasz Borowik

Kelvin force microscopy provides a spatially resolved measurement of the surface potential, which is related to the energetic band structure of a material. The goal of this work is to investigate the surface potential on Al0.7Ga0.3As and GaAs heterostructures with a decreasing layer thickness up to…

RSC Advances, 2016, 6 (8), pp.6782-6787. ⟨10.1039/c5ra24505b⟩. ⟨cea-01851572⟩

• Communication dans un congrès

Improved performance of flexible CMOS technology using ultimate thinning and transfer bonding

Emmanuel Dubois, Justine Philippe, Matthieu Berthomé, J.F. Robillard, Christophe Gaquière, Francois Danneville, Daniel Gloria, Christine Raynaud

Based on a simple process referred to as ultimate thinning-and-transfer-bonding (UTTB), this paper shows that the high-frequency performance of advanced CMOS technologies can be combined with mechanical flexibility and transparency. The invariance upon thinning, transfer and flexure of both DC and…

6th Electronic System-Integration Technology Conference (ESTC), Sep 2016, Grenoble, France. ⟨10.1109/ESTC.2016.7764513⟩. ⟨hal-03272693⟩