Publications

• Article dans une revue

Electro-(de)wetting on superhydrophobic surfaces

F. Lapierre, Yannick Coffinier, Rabah Boukherroub, V. Thomy

Langmuir, 2013, 29, pp.13346-13351. ⟨10.1021/la4026848⟩. ⟨hal-00903761⟩

• Communication dans un congrès

A 285 GHz sub-harmonic injection locked oscillator in 65nm CMOS technology

J. Moron Guerra, A. Siligaris, Jean-Francois Lampin, Francois Danneville, P. Vincent

A 285 GHz Sub Harmonic Injection Locked Oscillator (SHILO) is presented using a standard 65nm CMOS process. The architecture of this oscillator is based on the differential LC tank with push-push but adapted to obtain a third harmonic oscillation. The output power is -19 dBm at 285 GHz for a dc…

61st IEEE MTT-S International Microwave Symposium, IMS 2013, 2013, Seattle, WA, United States. paper WE1F-4, 3 p., ⟨10.1109/MWSYM.2013.6697345⟩. ⟨hal-00944033⟩

• Communication dans un congrès

200 GHz communication system using unipolar InAs THz rectifiers

Guillaume Ducournau, A. Westlund, P. Sangare, Christophe Gaquière, P.A. Nislon, L. Desplanque, J.L. Codron, X. Wallart, I. Iniguez de La Torre, J.F. Millithaler, T. Gonzales, J. Mateos, J. Grahn

38th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2013, 2013, Mainz, Germany. paper MO11-3, 2 p., ⟨10.1109/IRMMW-THz.2013.6665492⟩. ⟨hal-00914236⟩

• Article dans une revue

Optimization of Al0.29Ga0.71N/GaN high electron mobility heterostructures for high-power/frequency performances

S. Rennesson, F. Lecourt, N. Defrance, M. Chmielowska, Sébastien Chenot, Marie Lesecq, Virginie Hoel, Etienne Okada, Y. Cordier, Jean-Claude de Jaeger

IEEE Transactions on Electron Devices, 2013, 60, pp.3105-3111. ⟨10.1109/TED.2013.2272334⟩. ⟨hal-00872025⟩

• Communication dans un congrès

AlGaN/GaN heterostructures with very-thin buffer on Si (111) for NEMS applications : electrical and mechanical study

P. Leclaire, Y. Cordier, Sébastien Chenot, D. Theron, M. Faucher

22nd European Workshop on Heterostructure Technology, HeTech 2013, 2013, Glasgow, Scotland, United Kingdom. 2 p. ⟨hal-00877763⟩

• Communication dans un congrès

Enhanced gold film-coupled graphene-based plasmonic nanosensor

Rana Nicolas, Thomas Maurer, Gaëtan Lévêque, P. Subramanian, Julien Proust, Jérémie Béal, Silvere Schuermans, Jean-Pierre Vilcot, Z. Herro, M. Kazan, Jerome Plain, Rabah Boukherroub, Abdellatif Akjouj, Bahram Djafari-Rouhani, Pierre-Michel Adam, Sabine Szunerits

In this work, a trilayer graphene is used as a thin non dielectric spacer with a high index of refraction, between Au film and Au NPs. Encouraged by the sharpness of the localized surface plasmon resonance LSPR induced by this system, we performed sensitivity measurements to refractive index change…

SPIE Optics + Photonics 2013, Plasmonics : Metallic Nanostructures and their Optical Properties XI, 2013, San Diego, CA, United States. 88090R, 7 p., ⟨10.1117/12.2025237⟩. ⟨hal-00877762⟩

• Article dans une revue

DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation

Giuseppe Moschetti, Eric Lefebvre, Martin Fagerlind, Per-Åk Nilsson, L. Desplanque, Xavier Wallart, Jan Grahn

A new method for avoiding air exposure of the mesa-floor during processing of shallow-mesa InAs/AlSb HEMTs is reported. The method is based on the in situ chemical vapor deposition (CVD) of a SiNx-film, right after the shallow-mesa dry-etch process. The in situ CVD method allows also growing a…

Solid-State Electronics, 2013, 87, pp.85-89. ⟨10.1016/j.sse.2013.06.008⟩. ⟨hal-00871902⟩

• Article dans une revue

Ferromagnetism induced in ZnO nanorods by morphology changes under a nitrogen–carbon atmosphere

Brigitte Sieber, Jarno Salonen, Ermei Makila, Mikko Tenho, Markku Heinonen, Hannu Huhtinen, Petriina Paturi, Edwin Kukk, Guillaume Perry, Ahmed Addad, Myriam Moreau, Luc Boussekey, Rabah Boukherroub

RSC Advances, 2013, 3 (31), pp.12945. ⟨10.1039/c3ra41008k⟩. ⟨hal-02388422⟩

• Article dans une revue

Facile preparation of Fe nanochains and their electromagnetic properties

X.T. Zhan, H.Z. Tang, Y. Du, Abdelkrim Talbi, J.L. Zha, J.H. He

RSC Advances, 2013, 3, pp.15966-15970. ⟨10.1039/C3RA42386G⟩. ⟨hal-00871909⟩

• Communication dans un congrès

High frequency noise characterisation of graphene FET Device

D. Mele, S. Fregonese, Sylvie Lepilliet, E. Pichonat, Gilles Dambrine, H. Happy

RF GFET devices have been processed on SiC wafer using Al2O3 as a gate oxide. These devices have been characterised with DC, S parameter and high frequency noise measurement (NF50). The noise parameters have been extracted in order to evaluate the graphene material for RF applications. This GFET…

61st IEEE MTT-S International Microwave Symposium, IMS 2013, 2013, Seattle, WA, United States. paper TU3C-1, 4 p., ⟨10.1109/MWSYM.2013.6697561⟩. ⟨hal-00944030⟩