Publications

• Communication dans un congrès

Experimental investigation of the characteristics of the electromagnetic reverberation in the UWB bands

Aliou Bamba, Wout Joseph, Emmeric Tanghe, Luc Martens, Davy Gaillot, M. Lienard, Jose-Maria Molina-Garcia-Pardo, Maria-Teresa Martinez-Ingles

The electromagnetic reverberation time characteristics are investigated at UltraWide Band (UWB) frequencies, i.e., from 2 to 10 GHz. The reverberation time is bandwidth independent and decreases as the frequency increases. Besides, the reverberation ratio - the contribution of the diffuse fields in…

2014 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, AP-S/URSI 2014, Jul 2014, Memphis, TN, United States. pp.1181-1182, ⟨10.1109/APS.2014.6904917⟩. ⟨hal-03346231⟩

• Article dans une revue

100nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications

Cyrille Gardès, Sonia Bagumako, L. Desplanque, Nicolas Wichmann, S. Bollaert, Francois Danneville, Xavier Wallart, Yannick Roelens

We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies of 100/125 GHz together with minimum noise figure dB and associated gain dB at 12 GHz have…

SCIENTIFIC WORLD JOURNAL, 2014, 2014, 136340, 6 p. ⟨10.1155/2014/136340⟩. ⟨hal-00969148⟩

• Communication dans un congrès

Simulation and comparative study of graphene field effect transistor using ISE TCAD

B. Hafsi, A. Boubaker, N. Ismail, A. Kalboussi, Dominique Vuillaume, Kamal Lmimouni

7th International Conference on Molecular Electronics, ElecMol14, 2014, Strasbourg, France. ⟨hal-01055036⟩

• Communication dans un congrès

On the mechanical and electronic properties of alkylthiolated Au nanocrystals

Nicolas Clément, K. Smaali, S. Desbief, G. Foti, T. Frederiksen, D. Sanchez-Portal, A. Arnau, Jean-Philippe Nys, P. Leclere, Dominique Vuillaume

7th International Conference on Molecular Electronics, ElecMol14, 2014, Strasbourg, France. ⟨hal-01055035⟩

• Communication dans un congrès

Impact of spacing between array elements on the performances of diversity schemes in tunnels

M. Lienard, Jose-Maria Molina-Garcia-Pardo, C. Sanchis-Borras, Pierre Degauque

To increase channel capacity in tunnels, MIMO seems to be a promising technique despite the low angular spread of the rays. Indeed, for transmitting frequencies on the order or larger than 1 GHz, the tunnel behaves as an oversized waveguide and the concept of spatial diversity can be replaced by…

18th International Conference on Circuits, Systems, Communications and Computers, CSCC 2014, 2014, Santorini Island, Greece. pp.30-33. ⟨hal-01055044⟩

• Article dans une revue

In situ integrated tuner approach for load-pull measurement of Si/SiGe:C HBT at 200 GHz

Issam Hasnaoui, Alexandre Pottrain, Thomas Lacave, Pascal Chevalier, Daniel Gloria, Christophe Gaquière

Load impedance variations were obtained using an innovative integrated tuner at G-band. The 200 GHz load-pull measurements on a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) are presented. First, the linearity of the integrated tuner is checked. Then, the main load-pull…

Electronics Letters, 2014, 50, pp.1070-1072. ⟨10.1049/el.2014.0186⟩. ⟨hal-01055077⟩

• Communication dans un congrès

Caractérisation non linéaire de films minces de (Pb,Sr)TiO3

Freddy Ponchel, Ludovic Burgnies, Damien Ducatteau, Eric Lheurette, Denis Remiens, Didier Lippens

Ce travail traite de la caractérisation diélectrique haute fréquence, en petit et en grand signal, de films minces ferroélectriques déposées sur silicium haute résistivité. Quel que soit le régime de fonctionnement la structure utilisée est un guide d'onde coplanaire sans discontinuité avec…

13èmes Journées de Caractérisation Microondes et Matériaux, JCMM2014, 2014, Nantes, France. article 14, 4 p. ⟨hal-01006425⟩

• Communication dans un congrès

3D micro-supercapacitor based on MnO2 electrodes on silicon substrate

Etienne Eustache, Camille Douard, Pascal Tilmant, Dmitri Yarekha, Laurence Morgenroth, Christophe Lethien, Thierry Brousse

226th Meeting of the Electrochemical Society and XXIX Congreso de la Sociedad Mexicana de Electroquímica, 2014 ECS and SMEQ Joint International Meeting, 2014, Cancun, Mexico. ⟨hal-01015285⟩

• Article dans une revue

Optical properties of gallium nitride heterostructures grown on silicon for waveguiding application

Irma Saraswati, Arnaud Stolz, S. Ko, El Hadj Dogheche, Nji Raden Poespawati, Retno Wigajatri, Didier Decoster

Gallium nitride (GaN) on silicon (Si) is governed by the possibility to use this family of semiconductor for novel optoelectronic devices. GaN layers are deposited by MOCVD on silicon Si (111) using AlGaN buffer layer. We have studied the microstructure quality of the films. From SEM, TEM and AFM…

Advanced Materials Research, 2014, 980, pp.41-45. ⟨10.4028/www.scientific.net/AMR.980.41⟩. ⟨hal-01020484⟩

• Communication dans un congrès

Investigations into the dynamical properties of graphene on Ir(111)

Michael Endlich, Henrique Miranda, Alejandro Molina-Sanchez, Ludger Wirtz, Jörg Kröger

European Workshop on Epitaxial Graphene and 2D Materials, EWEG/2D 2014, 2014, Primosten, Croatia. ⟨hal-01009965⟩