Publications

Affichage de 6871 à 6880 sur 16142


  • Article dans une revue

0.2-μm InP/GaAsSb DHBT power performance with 10 mW/μm² and 25% PAE at 94 GHz

Mohammed Zaknoune, Etienne Okada, Estelle Mairiaux, Yannick Roelens, Damien Ducatteau, Peter Frijlink, Marc Rocchi, Hassan Maher

We report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of 0.20 × 9.5 μm2. Biased for highest power added efficiency (PAE), an output power of 6.62 mW/μm2 (11 dBm), a power gain of 5.2 dB, and…

IEEE Electron Device Letters, 2014, 35 (3), pp.321-323. ⟨10.1109/LED.2014.2298251⟩. ⟨hal-00955679⟩

  • Chapitre d'ouvrage

Invariance of DC and RF characteristics of mechanically flexible CMOS technology on plastic

Emmanuel Dubois, Aurelien Lecavelier Des Etangs-Levallois, Justine Philippe, Sylvie Lepilliet, Yoann Tagro, Francois Danneville, J.F. Robillard, Christine Raynaud, Daniel Gloria, Jacek Ratajczak

Invariance of DC and RF characteristics of mechanically flexible CMOS technology on plastic'. Functional nanomaterials and devices for electronics, sensors and energy harvesting, 2014. ⟨hal-04249256⟩

  • Communication dans un congrès

Sensing light and sound velocities of fluids in 2D phoxonic crystal slab

Yan Pennec, R. Moiseyenko, Bahram Djafari-Rouhani, S. Amoudache, R. Tigrine, R. Lucklum, A. Khater

We study theoretically the potentiality of dual phononic-photonic (the so-called phoxonic) crystals for sensing applications. In this work, we study the transmission normal to a periodically perforated silicon slab when the surrounding medium is a liquid. We investigate the existence of well-…

13th IEEE SENSORS Conference, SENSORS 2014, Nov 2014, Valencia, Spain. pp.355-357, ⟨10.1109/ICSENS.2014.6985007⟩. ⟨hal-03508195⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 4/2]

Raffaele Pisano

2014. ⟨hal-04517910⟩