Publications

• Article dans une revue

Electrowetting and semiconductors

S. Arscott

Electrowetting is coming to fruition for many applications such as display technologies, droplet transport, smart optics, flexible systems, remote switching, electronic paper, miniaturized chemistry and energy harvesting. Surprisingly, although most of the workings of this technology have been…

RSC Advances, 2014, 4 (55), pp.29223. ⟨10.1039/C4RA04187A⟩. ⟨hal-02345621⟩

• Communication dans un congrès

Ion-beam effect on functional properties of La2Ti2O7 piezoelectric thin films and nanoislands

A. Ferri, S. Saitzek, Z. Shao, A. Bayart, G. Declercq, Jean Costecalde, Denis Remiens, D. Deresmes, David Troadec, Rachel Desfeux

Low-dimensional material can display unique physical phenomena allowing an interesting way for the development of new technologies. In addition, owing the environmental requirements about electronic devices (ferroelectric memories, M/NEMS...), new lead-free piezoelectrics need to be created. In…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium I - Solution processing and properties of functional oxide thin films and nanostructures, 2014, Lille, France. ⟨hal-00964120⟩

• Communication dans un congrès

The resonance/thickness prediction of an ultra-thin layer by the low-frequency ultrasound

Gui-Jin Yao, Wei-Jiang Xu, Ke-Xie Wang

A prediction method of the thickness, resonant space and frequency for the two cases of an ultra-thin layer and the narrow-band frequency spectra has been developed without the appearance of the resonance/anti-resonance. Using the characteristic of straight line and the period of π of the layer…

21st International Congress on Sound and Vibration, ICSV 21, 2014, Beijing, France. paper 320, 7 p. ⟨hal-01055051⟩

• Communication dans un congrès

High polarization high breakdown voltage AlN/GaN-on-silicon transistors

Nicolas Herbecq, Isabelle Roch-Jeune, F Medjdoub

We have developed a back-side process on AlN/GaN-on-Si DHFETs in order to drastically enhance their electrical performances. With a buffer thickness of 1.8 μm, the Si substrate has been locally etched up to the buffer layers between the drain and the gate. After local silicon removal, the three-…

38th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE 2014, 2014, Delphi, Greece. 2 p. ⟨hal-01006455⟩

• Communication dans un congrès

Nonlinear measurement of non periodic pulse train with mixer based NVNA dedicated to radar power amplifier

Vincent Bridier, Damien Ducatteau, Maxime Olivier, Hans-Joachim Simon, François Graux, Philippe Eudeline, Gilles Dambrine

A measurement of time domain waveforms using a commercial two ports mixer based NVNA to measure a non periodic repetitive radar pulse train as a periodic one was performed. Then for the first time a 20GHz six port mixer based NVNA able to measure three different frequencies at the same time is…

International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMIC 2014, 2014, Leuven, Belgium. 3 p., ⟨10.1109/INMMIC.2014.6815076⟩. ⟨hal-01005646⟩

• Article dans une revue

RF and broadband noise investigation in high-k/metal gate 28-nm CMOS bulk transistor

Francois Danneville, Laurent Poulain, Yoann Tagro, Sylvie Lepilliet, Benjamin Dormieu, Daniel Gloria, P. Scheer, Gilles Dambrine

In order to pursue Moore's law, material engineering has constituted a real focus during the last decade. In particular, the recent introduction of new Gate stack using High-k dielectrics and Metal Gate (H-k/MG) for CMOS was a key point to downscale the 'Equivalent Oxide Thickness'.…

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2014, 27, pp.736-747. ⟨10.1002/jnm.1972⟩. ⟨hal-01058062⟩

• Communication dans un congrès

Acoustical twisting

Antoine Riaud, Michael Baudoin, Jean-Louis Thomas, Olivier Bou Matar

Joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. 2 p. ⟨hal-01015314⟩

• Article dans une revue

Design of GaN based optical modulator with Mach-Zehnder interferometer structure

R.W. Purnamaningsih, N.R. Poespawati, Irma Saraswati, El Hadj Dogheche

In this work we have designed a Mach Zehnder interferometer (MZI) for electro optic modulator at telecommunication wavelength using GaN on Sapphire. The knowledge of GaN sample optical properties were also investigated, resulting refractive index for the GaN layers were found to be nTE=2.279±0.001…

WSEAS Transactions on Communications, 2014, 13, pp.229-233. ⟨hal-01044743⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 4/2]

Raffaele Pisano

2014. ⟨hal-04517910⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 3/3]

Raffaele Pisano

2014. ⟨hal-04511046⟩