Publications

Affichage de 6981 à 6990 sur 16142


  • Communication dans un congrès

ZnO nanowires and PbS quantum dots for third-generation solar cells

Basma El Zein, Mutalifu Abulikemu, Erkki Alarousu, Omar F. Mohammed, Enrico Traversa, El Hadj Dogheche

Nanowires and quantum dots hold promising potency to enhance the performance of solar cells by improving light absorption, light trapping, exciton generation, and photoexcited-carrier collection. Quantum dot sensitized solar cells consist of three components: semiconductor quantum dots, one…

SPIE Photonics West, OPTO 2014, Conference 8987 - Oxide-based Materials and Devices V, 2014, San Francisco, CA, United States. ⟨hal-00964359⟩

  • Communication dans un congrès

Broadband sound attenuation on a periodic array of rectangular profile holes in plate

Rayisa P. Moiseyenko, Yan Pennec, Rémi Marchal, Bernard Bonello, Bahram Djafari-Rouhani

Transmission of acoustic waves through a periodic array of sub-wavelength slits or holes have been studied in several recent works in relation with physical phenomena such as resonant (extraordinary) transmission, broadband sound shielding or acoustic induced transparency (AIT). In this work, we…

SPIE Smart Structures/NDE 2014, Conference 9057 - Active and Passive Smart Structures and Integrated Systems VIII, 2014, San Diego, CA, France. 90571Q, 6 p., ⟨10.1117/12.2044845⟩. ⟨hal-00969103⟩

  • Communication dans un congrès

Mécanisme de transport dans des jauges de contraintes à nanoparticules colloïdales

Moussa Biaye, Heinrich Diesinger, Nicolas Decorde, Jérémie Grisolia, Benoit Viallet, Laurence Ressier, Thierry Melin

Les écrans tactiles envahissent notre quotidien (smartphones, tablettes ...). Dans ce travail, l'objectif est de caractériser des surfaces tactiles résistives basées sur le transport à travers des couches autoassemblées de nanoparticules (NPs) métalliques. Il s'agit d'utiliser la…

17ème Forum des Microscopies à Sonde Locale, 2014, Montauban, France. session 10, papier 36, 96-97. ⟨hal-00974549⟩

  • Communication dans un congrès

Design and fabrication of uni-travelling carrier (UTC) photodiode based on InxGa1-xN semiconductors

Bandar Alshehri, Karim Dogheche, P.I. Seetoh, J.H. Teng, S.J. Chua, Didier Decoster, El Hadj Dogheche

This work is focused both on InxGa1-xN single-layer and InxGa1-xN/GaN multilayered structures, with high Indium content (x>35%). In this study, InGaN/GaN films are epitaxially grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The microstructure of GaN and InxGa1-xN…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, 2014, Lille, France. ⟨hal-00961396⟩

  • Communication dans un congrès

Bande interdite de Bragg d'origine électrique dans les cristaux phononiques piezoelectriques à une dimension

Bertrand Dubus, Sébastien Degraeve, Christian Granger, Jerome O. Vasseur, M. Pham Thi, Anne-Christine Hladky

12ème Congrès Français d'Acoustique, CFA 2014, 2014, Poitiers, France. pp.Session APUS1 : Acoustique Ultrasonore, CFA2014/334, 1250-1253. ⟨hal-00978384⟩

  • Communication dans un congrès

Efficient reduction of thermal conductivity in silicon using phononic-engineered membranes

Valeria Lacatena, Maciej Haras, J.F. Robillard, Stéphane Monfray, Thomas Skotnicki, Emmanuel Dubois

Phononic crystals (PC) have been a remarkably active research field for more than two decades [1]. The principle of Bragg reflection on an artificial crystal-like structure leading to additional spectral (band gaps) and refractive (negative refraction, anisotropy) properties is scalable in any…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium D - Phonons and fluctuations in low dimensional structures, 2014, Lille, France. ⟨hal-00964542⟩

  • Communication dans un congrès

InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate

L. Desplanque, Xianglei Han, Maria Fahed, Vinay K. Chinni, David Troadec, M.-P. Chauvat, Pierre Ruterana, Xavier Wallart

We report on the realization of AlGaSb/InAs Esaki tunnel diodes on GaSb (001) substrate. Selective area molecular beam epitaxy of InAs is used to define the area of the diodes down to submicron dimensions. A peak current density up to 1.3 MA/cm2 is achieved.

26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Compound Semiconductor Week, CSW 2014, 2014, Montpellier, France. paper Mo-C1-6, 2 p., ⟨10.1109/ICIPRM.2014.6880530⟩. ⟨hal-01059835⟩