Publications

• Communication dans un congrès

Effect of pinch-off current leakage characteristics of AlGaN/GaN/Si HEMTs

H. Mosbahi, M. Gassoumi, H. Mejri, Christophe Gaquière, B. Grimbert, M.A. Zaidi, H. Maaref

European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium L - Group III nitrides, 2013, Strasbourg, France. ⟨hal-00819698⟩

• Article dans une revue

Defect-controlled hypersound propagation in hybrid superlattices

D. Schneider, F. Liaqat, E.H. El Boudouti, O. El Abouti, W. Tremel, H.J. Butt, Bahram Djafari-Rouhani, G. Fytas

We employ spontaneous Brillouin light scattering spectroscopy and detailed theoretical calculations to reveal and identify elastic excitations inside the band gap of hypersonic hybrid superlattices. Surface and cavity modes, their strength and anticrossing are unambiguously documented and fully…

Physical Review Letters, 2013, 111, pp.164301-1-5. ⟨10.1103/PhysRevLett.111.164301⟩. ⟨hal-00879487⟩

• Article dans une revue

Inline high frequency ultrasonic particle sizer

Fabrice Lefebvre, J. Petit, Georges Nassar, P. Debreyne, Guillaume Delaplace, Bertrand Nongaillard

This paper reports the development of a new method of particle sizing in a liquid. This method uses high frequency focused ultrasounds to detect particles crossing the focal zone of an ultrasonic sensor and to determine their size distribution by processing the reflected echoes. The major advantage…

Review of Scientific Instruments, 2013, 84 (7), pp.075101. ⟨10.1063/1.4811847⟩. ⟨hal-00877657⟩

• Communication dans un congrès

Simulation du photodétecteur métal-semiconducteur-métal

A.D. Zebentout, A.K. Aissat, Z. Bensaad, Didier Decoster

TELECOM'2013 and 8es Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2013, Marrakech, Maroc. papier 244, 1-4. ⟨hal-00804738⟩

• Communication dans un congrès

Design, modélisation et caractérisation de composants de puissances en technologie Si et III/V dans la bande millimétrique et sub-millimétrique

Issam Hasnaoui

Doctoriales Lille Nord de France 2013, 2013, Marcq-en-Baroeul, France. ⟨hal-00966103⟩

• Article dans une revue

Electronic structure and transport properties of Si nanotubes

J. Li, T. Gu, C. Delerue, Y.M. Niquet

The electronic structure and the transport properties of Si nanotubes with outer diameter between 2 and 20 nm are investigated using fully atomistic simulations. A formula is given for the energy of the band edges versus diameter and thickness. The phonon-limited mobility of electrons and holes is…

Journal of Applied Physics, 2013, 114 (5), pp.053706. ⟨10.1063/1.4817527⟩. ⟨hal-00871969⟩

• Article dans une revue

Coherent tunnelling across a quantum point contact in the quantum Hall regime

F. Martins, S. Faniel, B. Rosenow, Hermann Sellier, Serge Huant, M. G. Pala, L. Desplanque, X. Wallart, Vincent Bayot, B. Hackens

The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling between edge states across a quantum point contact (QPC) has already revealed rich physics, like fractionally charged…

Scientific Reports, 2013, 3, pp.1416. ⟨10.1038/srep01416⟩. ⟨hal-00932989⟩

• Article dans une revue

First reliability demonstration of sub-200 nm AlN/GaN-on-silicon double heterostructure HEMTs for Ka band applications

G. Meneghesso, M. Meneghini, F Medjdoub, Y. Tagro, B. Grimbert, D. Ducatteau, N. Rolland, R. Silvestri, E. Zanoni

IEEE Transactions on Device and Materials Reliability, 2013, 13, pp.480-488. ⟨10.1109/TDMR.2013.2276425⟩. ⟨hal-00913577⟩

• Communication dans un congrès

Réalisation et caractérisation de transistors à effet de champ à hétérojonction de la filière InAlAs/InGaAs sur substrat flexible

J.S. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J2-DA-P9, 4 p. ⟨hal-00878373⟩

• Article dans une revue

Interfacial X-ray photospectrometry study of In0.53Ga0.47As under different passivation treatments for metal oxide semiconductor field effect transistor devices

M.F. Mohd Razip Wee, Arash Dehzangi, Nicolas Wichmann, S. Bollaert, Burhanuddin Yeop Majlis

Micro and Nano Letters, 2013, 8, pp.836-840. ⟨10.1049/mnl.2013.0560⟩. ⟨hal-00909847⟩